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The Suppression Method of Raman Laser Thermal Effect for Sensitive
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CHEN Pei-li1, SONG Da1, 2, ZHOU Zhao-qiu1, CHEN Kai-yue1, SU Qiu-cheng1, LI Cui-qin3* |
1. Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640,China
2. University of Science and Technology of China, Hefei 230026,China
3. Northeast Petroleum University, Daqing 163319,China
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Abstract Laser-micro confocal Raman spectroscopy is widely used to study molecular structure, bonding effects, loading, and internal stress. The signal intensity and quality of Raman spectra are particularly important for the analysis. However, Raman laser irradiation on the surface of sensitive samples produces thermal effects and, thus, structural damage. The damaged parts of the sample collapse and shine. To obtain high-quality Raman spectra and realize non-destructive characterization, this paper innovatively proposes adding KBr as a heat sink to eliminate the thermal effect of laser. A series of carbon materials that are easily damaged under laser radiation were selected as the research objects, and the relationships between the carbon content of the samples, the addition of KBr, and the Raman spectral parameters and signal intensity were explored. The experimental results show that adding KBr can effectively inhibit the sensitive samples from being damaged by the Raman laser. When the addition ratio of KBr is 1∶2, accurate and nondestructive Raman spectroscopic detection of this material can be realized. In addition, the graphitization R values of carbon materials detected in different microregions are very close to each other; with the increase of carbon content, the position of the D peak is shifted to the low-wave region by ~3 cm-1, and the position of the G peak is shifted to the high-wave region by ~2 cm-1, and the difference between the peak positions of the D peak and the G peak is increased, with a decrease in the intensity ratio, and an increase in the ordering of the samples.
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Received: 2023-08-07
Accepted: 2023-12-25
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Corresponding Authors:
LI Cui-qin
E-mail: dqpilicuiqin@126.com
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