| 光谱学与光谱分析 |
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| Influence of Nitrogen Flow Rate on the Structure and Luminescence Properties of Silicon-Rich Silicon Nitride Film Materials in a High Hydrogen Atmosphere |
| ZHANG Lin-rui, ZHOU Bing-qing*, ZHANG Na，LU Xiao-cui, WUREN Tu-ya, GAO Ai-ming |
| College of Physics and Electron Information of Inner Mongolia Normal University, Key Lab of Physics and Chemistry for Functional Material, Huhhot 010022, China |
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Abstract High hydrogenated silicon-rich silicon nitride(SiNx∶H)thin films are deposited on the glass and monocrystalline silicon(110) substrates by plasma enhanced chemical vapor deposition using SiH4 and H2 as the main reaction gas with doping the N2. The ultraviolet-visible absorption spectrum, Fourier transform infrared absorption spectroscopy, Raman spectroscopy and photoluminescence spectrum are applied to characterize the changes of the band gap, the microstructure and related photoluminescence properties of the nitrogen-doped silicon film. It shows that hydrogen atoms can suppress the defects in the film and make film present silicon-rich under the low SiH4/H2 flow ratio, but they are not beneficial to the formation of silicon clusters in a hydrogen atmosphere. With the incorporation of nitrogen atoms, all the content of Si-N bonds, band gap and the degree of disorder in the microstructure of the films increase, films produce light emission related to the defect states. While the content of doped nitrogen atoms are further increased, it appears the band tail emission. Then the relationships between several light emissions and microstructure to be discussed. These results are useful for the optimization of light emission and microstructure for the silicon-rich silicon nitride film material prepared by PECVD.
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Received: 2015-05-20
Accepted: 2015-09-25
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Corresponding Authors:
ZHOU Bing-qing
E-mail: zhoubq@imnu.edu.cn
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