光谱学与光谱分析 |
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The Concentration Effect of Near-Infrared Quantum Cutting Luminescence of Tm3+ Ion Sensitized with Bi3+ Ion in YNbO4 Phosphor |
CHEN Xiao-bo1, LI Song1, CHEN Xiao-duan1, WANG Jie-liang1, HE Li-zhu2, WANG Shui-feng1, DENG Zhi-wei1, CHENG Huan-li1, GAO Yan3, LIU Quan-lin2 |
1. Applied Optics Beijing Area Major Laboratory and Department of Physics, Beijing Normal University, Beijing 100875, China 2. School of Materials Science and Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China 3. Laboratory of Nanomaterials, National Center for Nanoscience and Technology of China, Beijing 100190, China |
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Abstract Searching for new energy source is one of the most important projects faced by the global, while the most ideal new energy source is solar cell. Near infrared quantum cutting luminescence method can doubly transfer large energy photon which is not sensitive to Si or Ge solar cell to small energy photon which is sensitive to Si or Ge solar cell. It can resolve the spectral mismatch problem and largely enhance solar cell efficiency. Therefore, it is significant. The concentration effect of near-infrared quantum cutting luminescence of Tm3+Bi3+∶YNbO4 phosphor is reported in present manuscript. Through the measurement of excitation and emission spectra, it is found that the Tm0.058Bi0.010Y0.932NbO4 powder phosphor has intense 1 820.0 nm near-infrared quantum cutting luminescence. Further analysis finds they are multi-photon quantum cutting luminescence induced by the cross-energy transfer process. The population of 1G4 energy level may be directly transferred to lower energy level mainly through {1G4—3H4, 3H6—3H5} and {1G4—3H5, 3H6—3H4} cross-energy transfer processes, i. e. one population of the 1G4 energy level may effectively lead to two populations, which are positioned at the 3H4 and 3H5 energy levels, respectively, mainly through {1G4—3H4, 3H6—3H5} and {1G4—3H5, 3H6—3H4} cross-energy transfer processes. This may also effectively lead to three populations of the 3F4 energy level through {3H4—3F4, 3H6—3F4} cross-energy transfer process from the 3H4 level and multi-phonon non-radiative relaxation from the 3H5 level, respectively. This results in the effective three-photon near-infrared quantum cutting of the 3F4—3H6 fluorescence of Tm3+ ion. It’s also found that the sensitization action of Bi3+ ion to Tm3+ ion is very strong. The enhancement of the 1 820.0 nm near-infrared quantum cutting luminescence, of Tm0.058Bi0.010Y0.932NbO4 relative to Tm0.005Y0.995NbO4, is about 175.5 times, when excited by the 302.0 nm light. The present results are significant for the exploration of the next-generation multi-photon near-infrared quantum cutting germanium solar cell.
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Received: 2015-05-05
Accepted: 2015-09-02
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Corresponding Authors:
CHEN Xiao-bo
E-mail: chen78xb@sina.com
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