Preparation and Characterization of Poly-Si Films on Different Topography Substrates by AIC
WANG Cheng-long1,FAN Duo-wang1*,LIU Hong-zhong2,ZHANG Fu-jia3,XING Da4,LIU Song-hao4
1. National Engineering Research Center for Technology and Equipment of Environmental Deposition, Lanzhou Jiaotong University, Lanzhou 730070, China 2. State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, China 3. Institute of Physics Science and Technology, Lanzhou University, Lanzhou 730000, China 4. School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510631, China
Abstract：Polycrystalline silicon (poly-Si) thin-films were made on planar and textured glass substrates by aluminum-induced crystallization (AIC) of in situ amorphous silicon (a-Si) deposited by DC-magnetron. The poly-Si films were characterized by Raman spectroscopy, X-ray diffraction (XRD) and atomic force microscopy (AFM). A narrow and symmetrical Ranman peak at the wave number of about 521 cm-1 was observed for all samples, indicating that the films were fully crystallized. XRD results show that the crystallites in the authors’ AIC poly-Si films were preferably (111) oriented. The measurement of full width at half maximum (FWHW) of (111) XRD peaks showed that the quality of the films was affected by the a-Si deposition temperature and the surface morphology of the glass substrates. It is likely that an a-Si deposition temperature of 200℃ seems to be ideal for the preparation of poly-Si films by AIC.
Key words：a-Si thin film;Morphology;Temperature of substrate;Crystallization;AIC
王成龙1,范多旺1*,刘红忠2,张福甲3,邢达4,刘颂豪4 . 不同形貌衬底上铝诱导poly-Si薄膜的制备及表征[J]. 光谱学与光谱分析, 2009, 29(03): 752-755.
WANG Cheng-long1,FAN Duo-wang1*,LIU Hong-zhong2,ZHANG Fu-jia3,XING Da4,LIU Song-hao4 . Preparation and Characterization of Poly-Si Films on Different Topography Substrates by AIC. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2009, 29(03): 752-755.
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