Study on the Properties of the Pc-Si Films Prepared by Magnetron Co-Sputtering at Low Temperature
DUAN Liang-fei1,2, YANG Wen1,2, ZHANG Li-yuan1,2, LI Xue-ming1,2, CHEN Xiao-bo1,2, YANG Pei-zhi1,2*
1. Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology of Ministry of Education, Kunming 650092, China 2. Solar Energy Institute, Yunnan Normal University, Kunming 650092, China
Abstract：The polycrystalline silicon thin films play an important role in the field of electronics. In the paper, α-SiAl composite membranes on glass substrates was prepared by magnetron co-sputtering. The contents of Al radicals encapsulated in the α-Si film can be adjusted by changing the Al to Si sputtering power ratios. The as-prepared α-Si films were converted into polycrystalline films by using a rapid thermal annealing (RTP) at low temperature of 350 ℃ for 10 minutes in N2 atmosphere. An X-ray diffractometer, and Raman scattering and UV-Visible-NIR Spectrometers were used to characterize the properties of the Pc-Si films. The influences of Al content on the properties of the Pc-Si films were studied. The results showed that the polycrystalline silicon films were obtained from α-SiAl composite films which were prepared by magnetron co-sputtering at a low temperature following by a rapid thermal annealing. The grain size and the degree of crystallization of the Pc-Si films increased with the increase of Al content, while the optical band gap was reduced. The nc-Si films were prepared when the Al to Si sputtering power ratio was 0.1. And a higher Crystallization rate (≥85%) of polycrystalline silicon films were obtained when the ratio was 0.3. The band gaps of the polycrystalline silicon films can be controlled by changing the aluminum content in the films.
段良飞1,2，杨 雯1,2，张力元1,2，李学铭1,2，陈小波1,2，杨培志1,2* . 磁控共溅射低温制备多晶硅薄膜及其特性研究 [J]. 光谱学与光谱分析, 2016, 36(03): 635-639.
DUAN Liang-fei1,2, YANG Wen1,2, ZHANG Li-yuan1,2, LI Xue-ming1,2, CHEN Xiao-bo1,2, YANG Pei-zhi1,2* . Study on the Properties of the Pc-Si Films Prepared by Magnetron Co-Sputtering at Low Temperature. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2016, 36(03): 635-639.
