| 光谱学与光谱分析 |
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| The Influence of Thickness of SiO2 on the Electron Acceleration in Cathodluminescence-Like Emission |
| LIU Shan-shan, TENG Feng, XU Zheng, LIU Ming, SUN Shi-ju, XU Xu-rong |
| Institute of Optoelectronics Technology, Key Laboratory of Information Storage and Display, Beijing Jiaotong University, Beijing 100044, China |
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Abstract The authors investigated the property of cathodluminescence-like(CL-like) emission in the device of MEH-PPV sandwiched between two SiO2 layers. The authors observed in addition to the inherent electroluminescence of MEH-PPV, a shorter emission peak which is considered to be corresponding to HOMO-LUMO transition. From the relative change of these two peaks with the variation of the thickness of SiO2, The authors studied the electron acceleration ability of SiO2.
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Received: 2002-10-26
Accepted: 2003-03-06
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Corresponding Authors:
LIU Shan-shan
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| Cite this article: |
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LIU Shan-shan,TENG Feng,XU Zheng, et al. The Influence of Thickness of SiO2 on the Electron Acceleration in Cathodluminescence-Like Emission [J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2004, 24(07): 790-794.
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http://www.gpxygpfx.com/EN/Y2004/V24/I07/790 |
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