| 光谱学与光谱分析 |
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| Influence of Strain in the Si Cap Layer of Si/SiGe Heterostructure on Its Raman Spectra |
| XIAO Qing-hua,TU Hai-ling |
| General Research Institute for Non-Ferrous Metals，National Engineering Research Center for Semiconductor Materials，Beijing 100088, China |
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Abstract Strained Si/SiGe heterostructure was prepared by high dose Ge ion implantation and a subsequent high temperature rapid thermal processing method. A 325 nm UV laser was used to analyze the Raman spectra of the strained Si cap layer. It was found that tensile strain in the Si cap layer can induce a shift toward lower frequency of the first order Raman scattering peak of 520 cm-1. In light of the variation of peak position, a lateral tensile stress of 12.5×108 N·m-2 in Si cap layer was worked out. However, the tensile strain in the Si cap layer can not lead to a variation of the sub-order Raman scattering peaks around 1 555 and 2 330 cm-1.
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Received: 2003-12-12
Accepted: 2004-05-15
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Corresponding Authors:
XIAO Qing-hua
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| Cite this article: |
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XIAO Qing-hua,TU Hai-ling. Influence of Strain in the Si Cap Layer of Si/SiGe Heterostructure on Its Raman Spectra [J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2005, 25(05): 719-722.
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https://www.gpxygpfx.com/EN/Y2005/V25/I05/719 |
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