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| Temperature Dependence of InGaAs/GaAs Quantum Well Growth
Characterized by XRD and PL Spectral Analysis |
| LI Bo1, 2, MA Shu-fang1, 3*, YANG Zhi1, 2, CHENG Rui-si1, 2, LIU Si-min1, 2, WANG Jia-hui1, 2, HAO Xiao-dong1, 3, SHANG Lin1, 3, QIU Bo-cang1, 3, DONG Hai-liang4, HAN Dan4, XU Bing-she1, 4* |
1. Xi'an Key Laboratory of Compound Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, China
2. School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi'an 710021, China
3. School of Physical and Information Science, Shaanxi University of Science and Technology, Xi'an 710021, China
4. Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
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Abstract InGaAs/GaAs multiple quantum wells (MQWs) structures are widely utilized as active regions in lasers for optical communications and optoelectronic devices, owing to their unique quantum confinement effects and superior optoelectronic properties.The bandgap width can be finely tuned in this structure by modulating the indium (In) content to satisfy specific wavelength requirements. During the molecular beam epitaxy (MBE) growth of multiple quantum wells (MQWs), precise control over the material composition and thickness enables the optimization of their optical properties. Despite considerable progress in the development of InGaAs/GaAs multiple quantum wells (MQWs), the crystal quality and optical properties of high indium content InGaAs quantum wells remain limited by lattice mismatch, which leads to the formation of dislocations and interfacial defects. Therefore, enhancing crystal quality through precise modulation of MBE growth conditions is critical for improving the optical properties of these materials.Improving the interfacial and crystal quality of InGaAs/GaAs MQWs during the MBE growth process depends critically on the utilization of growth temperature to optimize the growth kinetics and hence control the migration of atoms at the interface, particularly the migration of In and Ga atoms. We grew two sets of InGaAs/GaAs MQWs at growth temperatures of 505 and 490 ℃, respectively, using the MBE method. The crystalline quality and optical properties of these samples were characterized and analyzed using high-resolution X-ray diffraction (HRXRD),photoluminescence (PL), and other complementary techniques. This study aims to investigate the impact of growth temperature on the crystal quality, interfacial integrity, and luminescence properties of the MQWs. According to HRXRD results, growth at high temperatures is advantageous for enhancing group III atomic dynamics and increasing the atomic diffusion length. This increases In and Ga atom migration during the growth process, which facilitates atom nucleation to find a lower energy position on the surface of the epitaxial layer. As a result, these samples grown at 505 ℃ have a lower defect density of 1.02×105 cm-2, fewer defects, less stress, and better crystal and interface quality. Further evidence that the MQWs samples developed at 505 ℃ have superior crystal quality compared to those formed at 490 ℃ is provided by the photoluminescence performance test and analysis findings, which also reveal that the MQWs samples exhibit high luminescence intensity and good luminescence uniformity. It is demonstrated that an optimal growth temperature is beneficial for enhancing the interfacial quality and optical properties of InGaAs/GaAs multiple quantum wells (MQWs). This process parameter provides an important reference value for the preparation of MQWs materials by MBE.
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Received: 2024-09-10
Accepted: 2025-01-09
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Corresponding Authors:
MA Shu-fang, XU Bing-she
E-mail: mashufang@sust.edu.cn；xubingshe@sust.edu.cn
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