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Design and Research of Magnetically Enhanced High-Throughput Glow Discharge Sputtering Source |
SHEN Yi-xuan1, 2, WAN Zhen-zhen3*, YU Xing2, 4*, WANG Hai-zhou2, 4*, WANG Yong-qing3, ZHU Yi-fei2, 4, LIU Shao-feng3 |
1. Beijing Advanced Innovation Center for Materials Genome Engineering, National Center for Materials Service Safety, University of Science and Technology Beijing, Beijing 100083, China
2. Beijing Key Laboratory of Metal Materials Characterization, The NCS Testing Technology Co., Ltd., Beijing 100081, China
3. College of Electronic Information Engineering, Hebei University, Baoding 071002, China
4. Beijing Advanced Innovation Center for Materials Genome Engineering, Central Iron and Steel Research Institute, Beijing 100081, China
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Abstract High-throughput characterization technology has important applications in metal material analysis. It can realize the cross-scale global analysis of metal materials and evaluate the macroscopic characteristics, microscopic inhomogeneity, and local defects of the material surface. Glow discharge sputtering can etch the sample layer by layer in a large-size, flat, and fast way along the depth direction of the sample surface, and then send the sample exposed to the real microstructure to a variety of analytical instruments for composition, performance, and structure analysis, to be the key equipment for high-throughput characterization of metal materials. Based on the traditional Grimm glow sputtering source, this study built a glow discharge sputtering system designed for high-throughput experiments. The system expands the glow sputtering scale from mm to cm levels. At the same time, it was found that large-size sputtering leads to a decrease in glow discharge intensity and sputtering rate. Because of this phenomenon, combined with the results of glow discharge electron trajectory, electron density, and chemical reaction rate calculated by COMSOL Multiphysics simulation, this study proposes a technical method to enhance the glow discharge spectrum ( GD-OES ) intensity and sputtering rate by applying a scanning magnetic field. The T2 copper sample was used to explore the enhancement effect of the scanning magnetic field. The results show that applying the scanning magnetic field enhancement device can obtain stronger spectral signal intensity and a faster sputtering rate. Under the premise of keeping the discharge voltage and current unchanged, the spectral intensity of Mo and Cu elements increased to 1.43~11.97 times and 1.13~26.50 times that without a magnetic field, respectively. Among them, the maximum spectral intensity of the Mo element can reach 53 421 Cts, and the maximum spectral intensity of the Cu element can reach 76 948 Cts, which are 6.86 times and 4.32 times that without a magnetic field, respectively. In addition, this method can significantly increase the sputtering rate. When the pore size of the anode tube is Φ15 mm, the sputtering rate of the T2 copper sample is increased by 4.35 times, up to 2 662.09 nm·min-1. The morphology and microstructure images of the sputtering pits were collected by white light interferometer and metallographic microscope. The results show that the pits after sputtering are flat and can clearly show the real microstructure characteristics of the samples. In summary, the experimental results show that the application of a scanning magnetic field enhancement device can improve the spectral signal intensity and sputtering rate, which provides a new method to solve the problem of low sputtering rate caused by large-size sputtering.
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Received: 2024-01-18
Accepted: 2024-07-18
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Corresponding Authors:
WAN Zhen-zhen, YU Xing, WANG Hai-zhou
E-mail: yuxing_email@163.com; wanzhenzhen@126.com; wanghaizhou@ncschina.com
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