FTIR Spectroscopic Studies of Inner Stress on Boron Carbon Nitride Thin Films
WANG Yu-xin1,ZHENG Ya-ru1,SONG Zhe1,FENG Ke-cheng2,ZHAO Yong-nian3
1. Department of Physics, Liaoning Normal University, Dalian 116029, China 2. College of Science, Changchun University of Science and Technology, Changchun 130022, China 3. National Key Laboratory of Super-Hard Materials, Jilin University, Changchun 130021, China
Abstract：Boron carbon nitride thin films were deposited by radio frequency (RF) magnetron sputtering technique using a 50 mm-diameter composite target consisting of h-BN and graphite in an Ar-N2 gas mixture. The composite target was composed of two semi disks：one of h-BN and the other one of graphite. The distance between the target and the substrate was kept at 50 mm. The chamber base pressure was below 5×10-4 Pa. During the deposition, the mixture of Ar (80%) and N2 (20%) was injected into the vacuum chamber and the total pressure was 1.3 Pa. The films were grown on silicon substrates at different deposition parameters, including sputtering power of 80-130 W, deposition temperature of 300-500 ℃ and deposition time of 1-4 h. The chemical bonding state of the samples was characterized by Fourier transform infrared absorption spectroscopy (FTIR). The results suggested that all of the films deposited at these deposition parameters are atomic-level hybrids composed of B, C and N atoms. Besides BN and carbons bonds, the boron carbide and carbon nitride bonds were formed in the BCN thin films. And the deposition parameters have important influences on the growth and inner stress of BCN thin films. That is the higher the sputtering power, the larger the inner stress; the higher or lower the deposition temperature, the larger the inner stress; the longer the deposition time, the larger the inner stress. So changing deposition parameters properly is a feasible method to relax the inner stress between the films and substrate. In the conditions of changing one parameter each time, the optimum deposition parameters to prepare BCN thin films with lower inner stress were obtained： sputtering power of 80 W, deposition temperature of 400 ℃ and deposition time of 2 h.
［1］ Liu A Y, Wentzcovitch R M, Cohen M L. Phys. Rev. B, 1989, 39(3)：1760. ［2］ Kurmaev E Z, Ezhov A V, Shamin S N, et al. J. Alloys Comp., 1997, 248：86. ［3］ Yu J, Wang E G. Appl. Phys. Lett., 1999, 74(20)：2948. ［4］ Ahn H, Alberts L, Whle J, et al. Surface and Coating Technol., 2001, 142：894. ［5］ Ling H, Wu J D, Sun J, et al. Diamond Relat. Mater., 2002, 11：1623. ［6］ Kim D H, Byon E, Lee S, et al. Thin Solid Films, 2004, 447：192. ［7］ Polo M C, Martínez E, Esteve J, et al. Diamond Relat. Mater., 1999, 8：423. ［8］ Wada Y, Yap Y K, Mori Y, et al. Diamond Relat. Mater., 2000, 9：620. ［9］ Perone A, Luches A, Dinescu M, et al. Appl. Surf. Sci., 1998, 133：239. ［10］ Yue J S, Cheng W J, Zhang X W, et al. Thin Solid Films, 2000, 375：247. ［11］ Martinez E, Lousa A, Esteve J. Diamond Relat. Mater., 2001, 10：1892. ［12］ Gago R, Jiménez I, Albella J M. Thin Solid Films, 2000, 373：277. ［13］ Yasui H, Hirose Y, Awazu K, et al. Coll. Surf. B, 2000, 19：291. ［14］ Ulrich S, Ehrhardy T, Theel T, et al. Diamond Relat. Mater., 1998, 71：839. ［15］ Liu L H, Wang Y X, Feng K C, et al. Appl. Surf. Sci., 2006, 252(12)：4185. ［16］ WANG Yu-xin, FENG Ke-cheng, LI Ying-ai, et al(王玉新，冯克成，李英爱, 等). Spectroscopy and Spectral Analysis(光谱学与光谱分析)，2006, 26(1)：102. ［17］ WANG Yu-xin, FENG Ke-cheng, WU Yun, et al(王玉新，冯克成,吴 云, 等). Journal of Changchun University of Science and Technology(长春理工大学学报)，2006, 29(1)：8. ［18］ SHI Wang-zhou, OUYANG Yan-dong, YU Bo(石旺舟，欧阳艳东，俞 波). Spectroscopy and Spectral Analysis(光谱学与光谱分析)，2001, 21(2)：187. ［19］ He D Y, Cheng W J, Qin J, et al. Appl. Surf. Sci., 2002, 191：338. ［20］ Nir D. J. Vac. Sci. Technol. A, 1986, 4：2954.
