Abstract：Femtosecond laser micromachining of film is an emerging technology for fabrication of MEMS devices. A Ti: sapphire laser (130 fs, 1 000 Hz)was used to irradiate the thin film with variations in process parameters such as pulse energy. The film thickness is about 4 μm which was measured by AFM. When we used single pulse to excite the film, the ablation diameter increased along with the energy ascending; when the energy of single pulse was invariable, the diameter had little change when altering the number of pulses. The single pulse threshold fluence of Au film was Fth＝0.7 J·cm-2 at this ultrashort pulse-length in air. By changing the energy of excitation pulse it was found that when the energy was lower than the threshold, the line on the film was heaved; when the energy was higher than the threshold, the line was concave, which was detected by AFM. It was also found that the width of line decreased along with the increase in process speed when the pulse energy remained unchanged; the width of line increased along with the pulse energy ascending when the process speed was fixed.
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