In-Situ Detection of SF6 Decomposition Products Based on Femtosecond Laser-Guided High-Voltage Discharge
ZHANG Yun-gang1, LIU Huang-tao1, GAO Qiang2, ZHU Zhi-feng2, LI Bo2, WANG Yong-da1
1. School of Electrical Engineering, Yanshan University, Qinhuangdao 066004, China
2. State Key Laboratory of Engines, Tianjin University, Tianjin 300072, China
Abstract：The occurrence of discharge due to insulation defects in gas insulated switchgear (GIS) can cause decomposition of SF6. The low-fluoride sulfide species produced by the decomposition react with trace amounts of H2O and O2 in the equipment to produce corrosive substances, which affect the normal operation of the equipment. Thus, it is of great significance to study the decomposition mechanism for the safe operation of GIS. Some decomposition products are transformed in the process of sampling. Hence, it is necessary to realize the in-situ detection of SF6 decomposition products to study the mechanism of SF6 decomposition. Femtosecond laser-guided high-voltage discharge technology was proposed to achieve the precise control of the space and time of high-voltage discharge, and the in-situ measurement of SF6 decomposition products was achieved by using space-resolved spectrum generated by femto second laser-guided high-voltage discharge in our work. In this paper, firstly, the decomposition of SF6 is not caused by femtosecond laser. Secondly, the precise control of discharge space and time is achieved by using the plasma channel generated by femtosecond laser. Finally, it is found that the decomposition contains a large number of S and F ions and atoms that are directly or indirectly generated by high-energy electron collisions. The research proves that in-situ detection of SF6 decomposition products can be achieved based on femtosecond laser-guided high-voltage discharge, which provides a new research method for the study of SF6 decomposition mechanism under high-voltage discharge.
[1] Zeng Fu-ping, Tang Ju, Sun Hui-juan, et al. IEEE Transactions on Dielectrics and Electrical Insulation, 2014, 21(4): 1462.
[2] Van Brunt R J, Herron J T. Physica Scripta, 1994, 1994(T53): 9.
[3] Tang Ju, Liu Fan, Zhang Xiaoxing, et al. IEEE Transactions on Dielectrics and Electrical Insulation, 2012, 19(1): 29.
[4] Chu F Y. IEEE Transactions on Electrical Insulation, 1986，21(5): 693.
[5] Li Zhen, Chen Shao-yi, Gong Shang-kun, et al. Computational and Theoretical Chemistry, 2016, 1088: 24.
[6] Polynkin P. Applied Physics Letters, 2017, 111(16): 161102.
[7] Li Bo, Tian Yi-fu, Gao Qiang，et al. Optics Express, 2018, 26(16): 21132.
[8] Ren M, Song B, Zhuang T, et al. ISA Transactions, 2018, 75: 247.
[9] Eschlböck-Fuchs S, Kolmhofer P J, Bodea M A, et al. Spectrochimica Acta Part B: Atomic Spectroscopy, 2015, 109: 31.
[10] Compton R N, Reinhardt P W, Cooper C D. The Journal of Chemical Physics, 1978, 68(5): 2023.
[11] Tuema F A, Macgregor S J, Fouracre R A, et al. IEEE Transactions on Plasma Science, 2000, 28(5): 1588.
[12] Yoshida S, Kojima H, Hayakawa N, et al. Conference Record of the 2008 IEEE International Symposium on. Electrical Insulation, 2008. 365.
