Abstract:Polycrystalline CdTe thin films were prepared by close-spaced sublimation (CCS) and were annealed in different condition. The thin films were characterized by scanning electron microscopy (SEM),X-ray diffraction (XRD) and X-ray photoelectron spectroscopy(XPS). The content distribution and valence state of all elements after annealing were studied. All results show that the as-deposited CdTe thin films are in a cubic phase and have the preferred orientation in (111) direction. After annealing, the peak intensity of (111), (220), (311) grows and the crystal grains grow up, while the crystal boundary decreases. So the compound probabilities of current carrier decrease, therefore shunt resistance and drain current are improved. From detailed analysis of X-ray photoelectron data, it is proposed that tellurium oxides present and its content reduces with depth increasing and that there are TeCl2O building blocks.
王文武,郑家贵*,冯良桓,蔡亚萍,雷 智,张静全,黎 兵,李 卫,武莉莉 . 图谱分析退火对CdTe多晶薄膜性能影响[J]. 光谱学与光谱分析, 2010, 30(03): 753-756.
WANG Wen-wu, ZHENG Jia-gui*, FENG Liang-huan, CAI Ya-ping, LEI Zhi, ZHANG Jing-quan, LI Bing, LI Wei, WU Li-li. Spectral Analysis of the Effect of Annealing on CdTe Polycrystalline Film . SPECTROSCOPY AND SPECTRAL ANALYSIS, 2010, 30(03): 753-756.
[1] Wu X, Keane J C, Dhere R G, et al. In: 17th European Photovoltaic Solar Energy Conference, Munich, WIP., 2001. 995. [2] Gordill G, Florez J M, Hernandez L Z. Solar Energy Materials and Solar Cells, 1995, 37: 273. [3] Sarlund J, Ritala M, Leskela M, et al. Solar Energy Materials and Solar Cells, 1996, 44: 177. [4] Adi R, Mostavan A, Rusmaeni N, et al. Technical Digest of the International PVSEC-9, Miyazak Japan, 1996. 137. [5] Paulson P D, Dutta V. Thin Solid Films, 2000, 370: 299. [6] Song W, Mao D, Feng L, et al. 1996, MRS, Mat. Res. Soc. Symp. Proc., Thin film for PV&related device applications 1996 MRS spring Symp., San Francisco, USA, 1996, Pittsburgh, USA, 426: 331. [7] Britt J, Ferekides C. Appl. Phys. Lett., 1993, 62(22): 2851. [8] Park C H, Chadi D J. Phys. Rev., 1995, B52:11884. [9] Castaldini A, Carallini A, Faboni B, et al. J. Appl. Phys., 1998, 83: 2121. [10] Valdna V, Buschmann F, Mellikov E. J. Cryst. Growth,1996,161(1-4): 167. [11] JIANG Xian-hui, ZHENG Jia-gui, LI Bin, et al(蒋显辉,郑家贵,黎 兵, 等). Journal of Functional Materials and Devices(功能材料与器件学报), 2007, 1: 68. [12] LI Wei, FENG Liang-huan, WU Li-li, et al(李 卫, 冯良桓, 武莉莉, 等). Acta Phys. Sin.(物理学报), 200, 54: 1879. [13] Aramoto T, Kumazawa S, Higuchi H, et al. Jpn. J. Appl. Phys., 1997, 36(10): 6304. [14] Wu X, Dhere R G, Albin D S, et al. NREL, Proceedings of NCPV Program Review Meeting. New York: AIP, 2001. 47. [15] Westphal G H, Rosenberger F, Cunningham P R. Journal of Chemical Physics, 1980, 72: 5192.