光谱学与光谱分析 |
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Research on the Phase and Optical Properties of nc-Si Films Prepared by Low Temperature Aluminum Induced Crystallization |
DUAN Liang-fei1, 2, YANG Wen1, 2 , YANG Pei-zhi1, 2*, ZHANG Li-yuan1, 2, SONG Zhao-ning3 |
1. Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology of Ministry of Education of China, Kunming 650092, China 2. Solar Energy Research Institute, Yunnan Normal University, Kunming 650092, China 3. Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, the University of Toledo, 43606, USA |
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Abstract In the present paper, nanocrystalline silicon thin films on glass substrates were prepared by rapid thermal annealing (RTA) of RF magnetron sputtered system and α-Si/Al films at a low temperature in N2 atmosphere. Optical metallographic microscope, confocal optical microscopy, X-ray diffractometer, Raman scattering and UV-Vis-NIR spectrometers were used to characterize the surface morphology and the phase and optical properties of nc-Si films. The influence of annealing process on the nc-Si films properties was studied. The results showed that nc-Si films were obtained after aluminum induced crystallization of the α-Si/Al films at 300 ℃, withthe crystallization rate 15.56% and the grain size 1.75 nm. The surface uniformity and lattice distortion of nc-Si films reduced, while grain size, degree of crystallization and the optical band gap of the films increased with increasing annealing temperature from 300 to 400 ℃. As the annealing temperature increased from 400 to 500 ℃, although the degree of crystallization and grain size increased, the tendencies of all other characteristics were opposite. On the contrary, the surface uniformity and the lattice distortion increased, but the optical band gap of nc-Si films reduced. The optical properties of the resulting films were confirmed by the absorption model of nc-Si thin films, where the tendency of band gap changes is in consistent with the optical modeling.
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Received: 2014-01-22
Accepted: 2014-04-15
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Corresponding Authors:
YANG Pei-zhi
E-mail: pzhyang@hotmail.com
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