Abstract：Ni-doped ZnO films were deposited on Si(100) by pulsed laser deposition(PLD) at room temperature. Fluorescence emission properties of the films were measured using VARAIN Cary-Eclips 500 fluorescence spectrum analyzer. Two peaks centered respectively at about 360 and 380 nm were observed. The origin of the ultraviolet peak at 360 nm was investigated through doping Ni into the ZnO films. It was found that the intensity of this ultraviolet peak changed with Ni content while its position remained stable. The fluorescence emission of the samples was optimal when Ni∶ZnO was 5 mol%, indicating that the peak centered at 360 nm might originate from the composite transition between the splitting valence band and conduction band, not from the entrance of the impurity energy level into the conduction band after doping.
[1] Jou J H, Han M Y, Cheng D J. Appl. Phys., 1992, 71:4333. [2] LI Jian-feng, YAO Lian-zeng, MU Ji-mei, et al(李剑锋, 姚连增, 牟季美, 等). Acta Phys. Sinica(物理学报), 2001, 50: 1623. [3] Shan W, Walukiewic W, et al. Appl. Phys. Lett., 2005, 86: 191911. [4] LIN Bi-xia, FU Zhu-xi, JIA Yun-bo, et al(林碧霞, 傅竹西, 贾云波, 等). Acta Phys. Sin.(物理学报), 2001, 50: 2208. [5] Vanheusden K, Warren W L, Seager C H, et al. Appl. Phys., 1996, 79: 7983. [6] Liu M, Kitai A H, Mascher P J. Lumin., 1992, 54: 35. [7] Jin B J, Im S, Lee S Y. Thin Solid Films, 2000, 366: 107. [8] Bae S H, Lee S Y, Kim H Y, et al. Opti. Mater., 2001, 17: 327. [9] WANG Jing, ZHANG Xi-qing, TENG Xiao-ying, et al(王 晶, 张希清, 腾小瑛, 等). Spectroscopy and Spectral Analysis(光谱学与光谱分析), 2004, 24(7): 775. [10] ZHANG De-heng, WANG Qing-pu, XUE Zhong-ying(张德恒, 王卿璞, 薛忠营).Acta Phys. Sin.(物理学报), 2003, 52: 1484. [11] PENG Xing-ping, LAN Wei, TAN Yong-sheng, et al(朋兴平, 兰 伟, 谭永胜, 等). Acta Phys. Sin.(物理学报), 2004, 53: 2075. [12] Qiu D J, Wu H Z, Feng A M, et al. Applied Surface Science, 2004, 222: 263.
