在不同衬底上制备的ZnO薄膜透射率的研究

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摘要：采用反应磁控溅射在不同结构衬底上生长ZnO薄膜，通过X-ray衍射(XRD)及透射光谱来分析薄膜的成膜情况，并得出在Al₂O₃/AlN复合基上溅射沉积的ZnO薄膜比单独在AlN薄膜衬底的结晶质量好且透过率也较高。而经不同的快速热退火温度验证，发现在400 ℃时，ZnO薄膜的结晶化及在(002)方向上的择优取向达到最好，并在可见光范围内的平均透过率达到88%以上。当退火温度超过450 ℃时，温度过高改变了ZnO薄膜的内部结构，使其氧原子和锌原子发生了较大距离的位移，导致薄膜内部缺陷的增多，从而存在过多的晶界，增加了其薄膜的散射机制，使光的透过性变差，退火温度为500 ℃时，薄膜的平均透过率为80%。

关键词：ZnO薄膜;结晶化;透射率;透明薄膜晶体管

Abstract：ZnO films were deposited on different structural substrate by rf-reactive Magnetron sputtering. The optical characteristics of ZnO films were studied by X-ray diffraction and optical transmission spectrum. The ZnO films deposited on the Al₂O₃/AlN compound substrate had better crystallized and had a higher transmittance compared to the ones on AlN substrate. The optical characteristics of ZnO films were studied after all samples with a series of annealing temperature from 200 ℃ to 500 ℃. When the annealing temperature was 400 ℃,crystallization and c-axis (002) oriented of the ZnO film got best,and average optical transmittance reached 88% in the range visible light. While annealing temperature went beyond 450 ℃,the crystallized structure of ZnO films was broken;the distance between O and Zn atoms became bigger. The authors found that the higher annealing temperature make against crystallization of ZnO thin film and increased density of defect states and dispersion mechanisms and reduced optical characteristics of ZnO film,and average optical transmittance of ZnO films reached 80% in the range of visible light at 500 ℃.

Key words：ZnO thin film;Crystallization;Optical transmittance;Transparent thin-film transistor

收稿日期: 2006-03-26 修订日期: 2006-06-06

中图分类号:

O484.4

通讯作者: 徐征 E-mail: zhengxu@center.njtu.edu.cn

引用本文:

袁广才,徐征^*,张福俊,王勇,赵德威,许洪华. 在不同衬底上制备的ZnO薄膜透射率的研究[J]. 光谱学与光谱分析, 2007, 27(07): 1263-1266.
YUAN Guang-cai,XU Zheng^*,ZHANG Fu-jun,WANG Yong,ZHAO De-wei,XU Hong-hua. Study of Transmittance of ZnO Film Deposited on Different Substrate. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2007, 27(07): 1263-1266.

链接本文:

https://www.gpxygpfx.com/CN/Y2007/V27/I07/1263

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