| 光谱学与光谱分析 |
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| Low Driving Voltage in Organic Light-Emitting Diodes with NPB/MoO3/NPB as a Hole Transport Layer |
| LIU Guo-qiang1, JI Wen-yu1, XIE Wen-fa2, ZHANG Han-zhuang1* |
1. Department of Physics, Jilin University, Changchun 130023, China
2. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130021, China |
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Abstract Driving voltage of organic light-emitting diodes (OLEDs) was lowered by applying (NPB/MoO3)x/NPB as a hole transport layer (HTL). (NPB/MoO3)x was multi-layer periodic (MLP) structure with x changed from 0 to 3. Compared with the conventional device with 0-periodic structure, the driving voltage of the device with 1-periodic structure was the lowest. This was due to charge transfer (CT) complex formation between NPB and MoO3. The driving voltage of tris(8-hydroxyquinoline) aluminum (Alq3)-based organic light-emitting devices (OLEDs) could be lowered by 0.8 V at 1 000 cd·m-2 by using multiple structure of NPB/MoO3/NPB.
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Received: 2010-07-22
Accepted: 2010-11-01
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Corresponding Authors:
ZHANG Han-zhuang
E-mail: hzzhang@mail.jlu.edu.cn
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