Abstract:In order to facilitate optical polishing of silicon carbide space telescope, in the present paper, silicon film, which has similar coefficient of thermal expansion with silicon carbide, was fabricated on SiC substrate by radio frequency magnetron sputtering. The effect of substrate temperature, radio frequency power, and substrate bias voltage was investigated by Raman scattering. The results indicate that at lower substrate temperature, the crystalline volume fraction of Si films increases with the increase in deposition temperature. Exceeding a certain temperature, the crystalline volume fraction decreases with further increasing deposition temperature; the increase in substrate bias voltage is bad for forming crystalline structure; the effect of radio power on microstructure of silicon film is comparatively complicated. As the rf power increases, the cluster size and crystallite volume fraction decrease, and both of them increase with further increasing the rf power. But when the rf power is too high, the crystallite volume fraction of the silicon film will decrease slightly.
Key words:SiC space telescope;Silicon film;Magnetron sputtering;Raman scattering
田 桂,朱嘉琦*,韩杰才,姜春竹,贾泽纯 . 溅射工艺参数对硅薄膜微结构影响的Raman分析[J]. 光谱学与光谱分析, 2010, 30(07): 1793-1797.
TIAN Gui, ZHU Jia-qi*, HAN Jie-cai, JIANG Chun-zhu, JIA Ze-chun . Effect of Technological Parameters of Sputtering on the Microstructure of Silicon Film Investigated by Raman Analysis . SPECTROSCOPY AND SPECTRAL ANALYSIS, 2010, 30(07): 1793-1797.
[1] HAN Jie-cai, ZHANG Yu-min, HE Xiao-dong(韩杰才,张宇民,赫晓东). Journal of Astronautics (宇航学报),2001,22(6):124. [2] HAN Yuan-yuan, ZHANG Yu-min, HAN Jie-cai, et al(韩媛媛,张宇民,韩杰才,等). Journal of Materials Engineering(材料工程),2005,(6):59. [3] Tam H Y, Cheng H B, Wang Y W. J. Mater. Process. Technol.,2007. 192-193:277. [4] Rodolfo J. Proc. of SPIE, 2008,7018:70180E-1. [5] Breysse J, Castel D, Laviron B, et al. All-SiC Telescope Technology: Recent Progress and Achievements. Proceedings of the 5th International Conference on Space Optics, Toulouse, France, 2004. 649. [6] YU Hai-jiao, ZHOU Xin-gui, ZHANG Chang-rui, et al(于海蛟,周新贵,张长瑞,等). New Technology & New Process(新技术新工艺),2006,(5):26. [7] TAN Yan, TANG Yuan-hong, PEI Li-zhai, et al(谭 艳,唐元洪,裴立宅,等). Spectroscopy and Spectral Analysis(光谱学与光谱分析),2007,27(4):725. [8] MA Zhi-xun, LIAO Xian-bo, KONG Guang-lin, et al(马智训,廖显伯,孔光临,等). Science in China(Series A)(中国科学·A辑),2000,30(2):169. [9] XUN Gang-yi, WANG Tian-min, LI Guo-hua, et al(徐刚毅,王天民,李国华,等). Chinese Journal of Semiconductors(半导体学报),2000,21(12):1170. [10] Toshiki Kaneko, Masatoshi Wakagi, Ken-ichi Onisawa, et al. Appl. Phys. Lett., 1994; 64(14): 1865. [11] Richter H, Wang Z P, Ley L. Solid State Communication, 1981, 39:625. [12] Honea E C, Ogura A, Murray C A, et al. Nature, 1993, 366:42. [13] Honea E C, Ogura A, Peale D R, et al. J. of Chem. Phys., 1999, 110(24): 12161. [14] Hadjadj A, Beorchia A, Roca i Cabarrocas P, et al. J. Phys. D: Appl. Phys., 2001, 34: 690. [15] Chan Kah-yoong, Teo Bee-san. Microelectronics J., 2006, 37:1064. [16] Kun Ho Kim, Ki Cheol Park, Dae Young Ma. Journal of Appl. Phys., 1997, 81(12):7764.