二维有序磁性Co纳米球阵列膜构筑及其光学性能研究

doi:10.3964/j.issn.1000-0593(2023)07-2037-06

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摘要：周期性纳米结构阵列因其独特的光学效应在新型传感技术领域具有巨大的应用潜力，引起人们极大的兴趣。其光学特性依赖于形貌和结构参数，一般可通过调整这些参数来调控其光学性能，而通过外加磁场调节其光学性能鲜有报道。通过气液自组装法制备胶体晶体模板，采用等离子体刻蚀技术实现了对胶体晶体模板结构尺寸的调控。在此基础上，结合磁控溅射技术合成了具有六角周期性排列的亚波长尺寸磁性Co纳米球阵列膜，并研究了其在结构参数和外磁场作用下的光学性质。通过紫外-可见-近红外光反射谱发现，随着刻蚀时间从0 min增加到4.5 min，在可见光波段，光反射峰波长从512 nm蓝移到430 nm，蓝移了82 nm，峰强从10.69%降低到7.96%，减弱了2.73%；在近红外光波段，光反射峰波长从1 929 nm蓝移到1 692 nm，蓝移了237 nm，峰强从10.92%降低到7.91%，减弱了3.01%。通过控制刻蚀的时间，可实现对Co纳米球阵列膜光反射峰峰位和峰强的有效调控。对未刻蚀和刻蚀的Co纳米球阵列膜施加一个垂直的外加磁场，在外磁场作用下，二者的光反射峰峰强均表现出不同程度的增强。随着外加磁场的逐增，未经刻蚀的Co纳米球阵列膜在近红外波段(1 938 nm)的光反射峰峰强从10.81% (0 Oe) 增加到16.56% (1 100 Oe)，增强了5.8%；而经等离子体刻蚀后的Co纳米球阵列膜的近红外反射峰(1 921 nm)，其峰强从8.45% (0 Oe) 增加到16.74% (1 000 Oe)，增强了8.29%。结果表明，经等离子体刻蚀后的磁性Co纳米球阵列膜的反射光谱表现出更灵敏的外磁场响应。基于近红外光反射峰最大值与外磁场强度的关系，定性解释了外磁场对磁性Co纳米球阵列膜的光反射性能的影响：对于未刻蚀的样品，外磁场主要通过改变样品的磁有序，从而影响其复折射率进而影响其光反射性能；对于刻蚀后的样品，除了外磁场对样品的磁有序产生影响从而影响其光反射率外，还有诸如散射、衍射等其他物理机制相互竞争的影响。该研究为磁场动态调控材料的光反射性能提供了一种方法，也为新型光学器件的研究提供了模型。

关键词：磁性Co纳米球阵列膜；等离子体刻蚀技术；磁控溅射技术；外磁场；光学性能

Abstract：Periodic nanostructure arrays have attracted great interest because of their unique optical effects with great potential for applications in novel sensing technologies. Their optical properties depend on morphology and structural parameters, and their optical properties can generally be regulated by tuning these parameters, while the adjustment of their optical properties by an applied magnetic field has rarely been reported. We prepared colloidal crystal templates by gas-liquid self-assembly method and realized the regulation of the structure size of colloidal crystal templates by a plasma etching technique. Combined with magnetron sputtering technology, subwavelength-sized magnetic Co nanosphere array films with hexagonal periodic arrangement were synthesized, and its optical properties under the action of structural parameters and external magnetic field were investigated. The UV-Vis-NIR light reflection spectrum showed that the peak position of the light reflection peak shifted from 512 to 430 nm in the visible band with an increase in etching time from 0 min to 4.5 min, a blue shift of 82 nm. The peak intensity of light reflection decreased from 10.69% to 7.69%, weakening by 2.73%. In the NIR band, the peak position of the light reflection peak was blue-shifted by 237 nm f rom 1 929 to 1 692 nm, and the peak was reduced by 3.01% from 10.92% to 7.91%. By controlling the etching time, effective tuning of the peak position and peak intensity of the light reflection peak of the Co nanosphere array films can be achieved. A perpendicular external magnetic field was applied to both the unetched and etched Co nanosphere array films, and both exhibited different degrees of enhancement in the peak intensity of light reflection under the effect of the external magnetic field. The peak intensity of the optical reflection of the unetched Co nanosphere array films in the NIR band (1 938 nm) increased from 10.81% (0 Oe) to 16.56% (1 100 Oe) with the increase of the applied magnetic field, with an enhancement of 5.8%. Nevertheless, the NIR reflection peak (1 921 nm) of the Co nanosphere array films after plasma etching, its peak intensity increased from 8.45% (0 Oe) to 16.74% (1 000 Oe), which is enhanced by 8.29%. The results show that the reflection spectra of the magnetic Co nanosphere array films after plasma etching exhibit a more sensitive external magnetic field response. Based on the relationship between the maximum value of the NIR light reflection peak and the strength of the external magnetic field, the effect of the external magnetic field on the light reflection performance of the magnetic Co nanosphere array films was qualitatively explained. For unetched samples, the external magnetic field mainly changes the magnetic order of the sample, thereby affecting its complex refractive index and thus its light reflection properties. For the etched sample, in addition to the influence of the external magnetic field on the magnetic order of the sample, which affects its light reflectivity, there are other competing physical mechanisms such as scattering, diffraction and so on. This study provides a method for dynamically modulating the light reflection properties of materials by magnetic fields and a model for the study of novel optical devices.

Key words：Magnetic Co nanosphere array film; Plasma etching technology; Magnetron sputtering technology; External magnetic field; Optical properties

收稿日期: 2022-02-10 修订日期: 2023-04-18

中图分类号:

O433.4

基金资助: 国家自然科学基金项目（51671139），浙江省自然科学基金项目（LY21F050001）资助

通讯作者: 李志刚，冯尚申 E-mail: lizg@tzc.edu.cn; fengss@zafu.edu.cn

作者简介: 李诗伦，1996年生，浙江农林大学光机电工程学院硕士研究生 e-mail: lsl13414854206@163.com
刘涛，1997年生，台州学院医药化工与材料工程学院本科生 e-mail: lt2718655428@163.com
李诗伦，刘涛：并列第一作者

引用本文:

李诗伦，刘涛，宋文敏，王天乐，刘伟，陈亮，李志刚，冯尚申. 二维有序磁性Co纳米球阵列膜构筑及其光学性能研究[J]. 光谱学与光谱分析, 2023, 43(07): 2037-2042.
LI Shi-lun, LIU Tao, SONG Wen-min, WANG Tian-le, LIU Wei, CHEN Liang, LI Zhi-gang, FENG Shang-shen. Study of Two-Dimensional Ordered Magnetic Co Nanosphere Array Film Construction and Its Optical Properties. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2023, 43(07): 2037-2042.

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