Study on Photoluminescence Quenching of Quantum Well Structure Devices under Reverse Voltage
ZHU Hai-na,XU Zheng*, ZHANG Fu-jun, ZHAO Su-ling, WANG Zhi-bin, SONG Dan-dan, ZHANG Yan-fei
Key Laboratory of Luminescence and Optical Information of Ministry of Education，Institute of Optoelectronic Technology, Beijing Jiaotong University，Beijing 100044，China
Abstract：Three organic devices with different quantum well period were fabricated. The potential barrier layer and well layer for electrons were made of N,N’-diphenyl-N,N’-bis(1-napthyl)-1,1’-biphenyl l-4,4’-diamine(NPB) and 4,4,N,N’-dicarbazolebiphenyl(CBP). The photoluminescence quenching of these three devices under changed reverse voltages were studied. Results showed that photoluminescence quenching of NPB layer occurs more quickly than that of CBP layer in the authors’ devices. This is because that the effective electric field in NPB layer is higher than that in CBP layer. The excitons in NPB and CBP layer were easily to be dissociated when the quantum well period increased under the same reverse voltage. Since these three devices are type Ⅱ quantum well structure, the excitons in these devices are not very stable.
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