A Study of Depositing Amorphous SiOx Films vis Magnetron Sputtering by FTIR Method
WANG Shen-wei,YI Li-xin*,SU Meng-chan, CHEN En-guang, WANG Yong-sheng
Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
Abstract：Amorphous SiOx films were deposited on Si substrates by magnetron sputtering technology. Three absorption bands of the SiOx films were detected by Fourier transform infrared spectroscopy. The authors′ investigation shows that Si-Oy-Si4-y(0<y≤4), Si6 rings, and non-bridging oxygen hole center defects were formed in the films with the sputtering power increasing. The appearance of the three absorption bands was due to the stretching and asymmetric stretching vibration of Si—O—Si bond and the vibration of O—Si—O bond corresponding to the above mentioned structures in the SiOx films.
王申伟,衣立新*,苏梦蟾,陈恩光,王永生. 红外吸收光谱法研究磁控溅射沉积SiOx非晶薄膜的过程[J]. 光谱学与光谱分析, 2007, 27(03): 456-459.
WANG Shen-wei,YI Li-xin*,SU Meng-chan, CHEN En-guang, WANG Yong-sheng. A Study of Depositing Amorphous SiOx Films vis Magnetron Sputtering by FTIR Method. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2007, 27(03): 456-459.
