In Situ Raman Spectrum Peak Test of Monocrystalline Silicon Wafer under Quantitative Uniaxial Pressure
XIE Chao1, DU Jian-guo1*, LIU Lei1, YI Li1, LIU Hong1, CHEN Zhi1, LI Jing2
1. CEA Key Laboratory of Earthquake Prediction (Institute of Earthquake Science, China Earthquake Administration), Beijing 100036, China 2. Institute of Disaster Prevention, Yanjiao 065201, China
Abstract：The relationship between total uniaxial stress (F/N) and strain (ε/μm/m) of wolfram carbide (WC) base in diamond anvil cell was measured: F=3.395ε+12.212 (R2=0.999 9), and a device was developed which can be used to test the spectral characteristics of the sample in situ under quantitative uniaxial pressure. The Raman spectrum peak of monocrystalline silicon wafer was tested by using this device under a uniaxial pressure up to 2 548.664 MPa. The test result shows that, when the pressure is perpendicular to [100] crystal plane of the monocrystalline silicon sample, the 519.12 cm-1 peak shifts towards high frequency linearly with increasing pressure, and the linear relationship between shift amount of Raman spectrum peak frequency (Δω/cm-1) and pressure (σ/MPa) is: σ=365.80Δω+10.19, wherein the constant may reflect the presence of residual stress in the sample to some extent, and some difference between monomial coefficient and the result of theoretical calculations may be due to sample stress orientation in this experiment.The constant in the Δω-σ linear relationship reflects experimental errors and the value of residual inner stress to some extent.
谢 超1，杜建国1*，刘 雷1，易 丽1，刘 红1，陈 志1，李 静2 . 定量单轴压力下单晶硅片原位拉曼谱峰测试 [J]. 光谱学与光谱分析, 2016, 36(04): 1261-1265.
XIE Chao1, DU Jian-guo1*, LIU Lei1, YI Li1, LIU Hong1, CHEN Zhi1, LI Jing2 . In Situ Raman Spectrum Peak Test of Monocrystalline Silicon Wafer under Quantitative Uniaxial Pressure. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2016, 36(04): 1261-1265.
[1] Jamieson J C, Lawson A W, Nachtrieb N D. Review of Scientific Instrument, 1959, 30: 1016. [2] Dunstan D J, Scherrer W. Review of Scientific Instrument, 1988, 59(4): 627. [3] Bassett W A, Shen A W, Bucknum M, et al. Pure and Applied Geophysics, 1993, 141(2-4): 487. [4] Silvera I F. Review of Scientific Instrument, 1999, 70(12): 4609. [5] Evans W J, Yoo C S, Lee G W, et al. Review of Scientific Instrument, 2007, 78(7): 073904.1. [6] Shinoda K, Noguchi N. Rev. Review of Scientific Instrument, 2008, 79(015101): 1. [7] Mao H K, Xu J, Bell P M J. Journal of Geophysical Research, 1986, 91(B5): 4673. [8] Bassett W A, Shen A W, Bucknum M. Review of Scientific Instrument, 1993, 64: 2340. [9] Christian S, Martin A Z. American Mineralogist, 2000, 85: 1725. [10] Kaltsas G, Nassiopoulos A G. Microelectronic Engineering, 1997, 35(1-4): 397. [11] Ingrid D W. Semiconductor Science and Technology, 1996, 11(2): 139. [12] Ingrid D W. Journal of Raman Spectroscopy, 1999, 30(10): 877.
