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| Study on the Photoluminescence Properties of ZnO Single Crystal |
| WU Cheng-ling1, GUO Jun-hong1, 2, YAO Heng-bin1, PAN Ling-nan1, WANG Fei1, WU Wen-qi1, JI Tong1, HU Fang-ren1, 2* |
1. School of Optoelectronic Engineering, Nanjing University of Posts and Telecommunicates, Nanjing 210023, China
2. Peter Grünberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing 210003, China |
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Abstract Zinc oxide (ZnO) single crystal is widely considered to be fabricated as a short wavelength light emitting device. In thsi paper temperature-dependent photoluminescence property of the ZnO single crystal was measured with laser irradiation method. Besides, the photoluminescence property was measured with different laser irradiation intensity. The results show that the peak of photoluminescence spectrum moves towards the ultraviolet region with the decreasing temperature. This phenomenon can be attributed to the stronger bound exciton combination in the lower temperature. The peak intensity of the photoluminescence is much stronger with stronger laser irradiation. Furthermore, the ZnO single crystal is hexagonal crystal from the X-ray diffraction pattern and Raman spectra. In addition, ZnO demonstrates good crystallization with C axis orientation. Furthermore, this paper has combined Raman scattering experimental and XRD technology to study the structure and energy level property of ZnO single crystal deeply.
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Received: 2015-09-18
Accepted: 2016-01-30
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Corresponding Authors:
HU Fang-ren
E-mail: hufr@njupt.edu.cn
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