| 光谱学与光谱分析 |
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| Study of PL Spectra of PbSe Quantum Dots for IC Chip Temperature Dependence |
| WANG He-lin1,2, ZHANG Yu1,2*, LIU Wen-yan1, WANG Guo-guang2, ZHANG Tie-qiang2 |
1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
2. State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China |
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Abstract Colloidal PbSe QDs were prepared with the particle size of 3.6, 5.1 and 6.0 nm, and the temperature-dependent optical properties of colloidal PbSe QDs were investigated. At the room temperature, the experiment showed that there is red shift with increasing temperature; photoluminescence spectra of large size colloidal PbSe QDs is blue shifted with increasing temperature. Proposed a temperature detection method of integrated circuit was proposed based on photoluminescence spectra of colloidal PbSe QDs. The method for temperature detection includes colloidal PbSe quantum dots deposited on the surface of the printed circuit board, colloidal PbSe quantum dots of the surface are excited by the laser and infrared spectrometer receives photoluminescence spectra. Image acquisition system used for micron scale areas of temperature detection collects a tiny and specific areas imaging in the surface of chip. Experiments showed that the measurement accuracy is ±3 ℃ and the relative error is less than 5％.
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Received: 2014-01-08
Accepted: 2014-04-11
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Corresponding Authors:
ZHANG Yu
E-mail: yuzhang@jlu.edu.cn
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