Ba2MgGe2O7∶Cr4+晶体中荷移激发态对g因子贡献的研究

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Abstract A complete high-order perturbation formula of g factor for cubic 3d² MX₄ clusters was established. In the formula, not only the contributions of the crystal-field (CF) mechanism (which is related to the CF excitations) to the g-shift Δg(=g-g_s), but also the contributions of the charge-transfer (CT) mechanism (related to CT excitations) were considered. Using the formula, the g factor of Ba₂MgGe₂O₇∶Cr⁴⁺ was calculated. The result was in agreement with the observed value. It was found that the calculated Δg_CT due to the charge-transfer mechanism is opposite in sign and about 38% in magnitude, compared with the calculated Δg_CF due to the crystal-field mechanism. So, for a high valence 3dⁿ ion in crystals, the reasonable explanation of g factor should take into account the contributions of both crystal-field and charge-transfer mechanisms.

Key words：Electron paramagnetic resonance;g factor;Charge transfer mechanism;Crystal-and ligand-field theory;Ba₂MgGe₂O₇ crystal

Received: 2005-11-08 Accepted: 2006-02-16

ZTFLH:

O482.5

Corresponding Authors: WU Xiao-xuan E-mail: wxxdd@163.com

Cite this article:

WU Xiao-xuan,ZHENG Wen-chen. Study on the Contribution of the Charge Transfer Excited States in Ba₂MgGe₂O₇∶Cr⁴⁺ Crystal to g Factor [J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2007, 27(01): 8-11.

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https://www.gpxygpfx.com/EN/Y2007/V27/I01/8

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