Raman and Visible-Near Infrared Spectra of Cu(InGa)Se2 Films
XU Dong-mei1, PAN Kun1, LIU Xu-wei1, WANG Xue-jin1*, WANG Wen-zhong2, LIANG Chun-jun3, WANG Zhi2
1. College of Science, China Agricultural University, Beijing 100083, China 2. Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China 3. School of Science, Beijing Jiaotong University, Beijing 100044, China
Abstract：Cu(InxGa1-x)Se2(CIGS) precursor films were prepared on ITO glass with potentiostatic electrodeposition. High quality CIGS films were obtained by selenization of the precursor films at high temperature in tubular furnace full of argon gas. X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-Vis-NIR spectroscopy were used to characterize the structure, morphology, composition and Vis-NIR absorption of CIGS films, respectively. XRD results show the selenized CIGS films have a preferential orientation (112) with average crystallite of 24.7 nm. Raman spectroscopy reveals that the CIGS films are pure quaternaryphases with chalcopyrite structure, and without binary or ternary phases in the films. Vis-NIR measurements determine that the bandgap of CIGS increases with the increase of Ga concentration in the film. When the Ga concentration is 5.41%, its bandgap is about 1.11 eV, and the calculated ratio of Ga to (Ga+In) is 16.3%, which is less than the ratio of Ga to (Ga+In), 21.4%, measured by SEM. This indicates that crystallinity of CIGS filmsneeds to be further improved. All the measurements demonstratethat optimum ITO/CIGS has a promising application in bifacial solar cells. In this paper, we provide a newmethodtoelectrodeposit low cost CIGS precursor films and a new method forselenization ofthe precursor films at high temperature. As a result, theuniform and compact CIGS films with good adhesion on ITO are successfully fabricated by these methods. The above characterization show that we have obtained CIGS films with high crystallinity, near stoichiometry, few impurity phases and superior light absorption. Electrodeposition, like magnetron sputtering, is very suitable for large-scale industrial production. The research work in this paper is therefore important and considerable to massive production of electrodeposition of CIGS films.
徐冬梅1，潘 坤1，刘旭炜1，王学进1*，王文忠2，梁春军3，王 志2 . 铜铟镓硒薄膜的拉曼和可见-近红外光谱表征 [J]. 光谱学与光谱分析, 2016, 36(10): 3197-3201.
XU Dong-mei1, PAN Kun1, LIU Xu-wei1, WANG Xue-jin1*, WANG Wen-zhong2, LIANG Chun-jun3, WANG Zhi2 . Raman and Visible-Near Infrared Spectra of Cu(InGa)Se2 Films . SPECTROSCOPY AND SPECTRAL ANALYSIS, 2016, 36(10): 3197-3201.
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