Temperature-Dependent Photoluminescence Property Studies of SiNx Films with nc-Si
LIU Jian-ping, ZHENG Yan, LIU Hai-xu, YU Wei*, DING Wen-ge, LAI Wei-dong
College of Physics Science and Technology, Hebei University, Key Laboratory of Photo-electicity Information Materials of Hebei Province, Baoding 071002, China
Abstract:Silicon nitride (SiNx) films containing nanocrystalline silicon (nc-Si) were deposited on crystalline silicon substrate by facing-target sputtering technique. Thermal annealing process was performed at 450 ℃ for 50 min in a conventional furnace under FG(10%H2,90%N2) ambient. The photoluminescece (PL) properties of the SiNx films with nc-Si were investigated by steady/transient PL spectra measurements by Fluorescence spectrometer with different temperatures. The PL processes could be attributed to the quantum confinement effect of nc-Si and the defects in the film. The PL peak position exhibits a small blue shift with the increasing of the excitation energy, which indicates that the PL portion of the nc-Si increased with smaller size. In addition, the PL lifetime increases and the PL intensity exhibits exponential increase as a result of the decreased temperature which supressed the nonradiative recombination process and then improved the radiative recombination. The PL lifetime of the film significantly reduces with the decreasing of the detection wavelength, which indicates that the PL process related to the the quantum confinement effect strongly depends on temperature.
Key words:nc-Si/SiNx;Photoluminescence properties;The temperature dependent
[1] Ray S K, Maikap S, Banerjee W, et al. J. Phys. D: Appl. Phys., 2013, 46: 153001. [2] Patrice Miska, Manuel Dossot, Thi D Nguyen, et al. J. Phys. Chem. C,2010, 114: 17344. [3] Jayatilleka H, Diamare D, Wojdak M, et al. Journal of Applied Physics,2011, 110: 033522. [4] Lu Peng, Wang Xiaotong, Yang Shengzhi, et al. Chin. Sci. Bull.,2014, 59(34): 4758. [5] Lin L H, Sun X Z, Tao R, et al. Journal of Applied Physics,2011, 110(7): 073109. [6] Katerina Kusova, Lukas Ondic, Eva Klimesova, et al. Applied Physics Letters,2012, 101: 143101. [7] Viktor Danko, Katerina Michailovska, Ivan Indutnyi, et al. Nanoscale Research Letters,2014, 9: 165. [8] Lin Gongru, Pai Yihao, Lin Chengtao, et al. Applied Physics Letters,2010, 96: 263514. [9] Sombrio G, Franzen P L, Maltez R L, et al. Journal of Physics D: Applied Physics,2013, 46: 235106. [10] Sain B,Das D. Phys. Chem. Chem. Phys.,2013, 15: 3881. [11] Wang Minghua, Li Dongsheng, Yuan Zhizhong, et al. Applied Physics Letters, 2007, 90: 131903. [12] Nadjet Hafsi, Hachemi Bouridah, Mahmoud Riad Beghou, et al. Journal of Applied Physics,2015, 117: 063105. [13] Hakim Haoues, Hachemi Bouridah, Mahmoud Riad Beghoul, et al. Materials Science in Semiconductor Processing,2013, 16: 1849. [14] Zeng Xiangbin, Liao Wugang, Wen Guozhi, et al. Journal of Applied Physics,2014, 115: 154314. [15] Hartel A M, Gutsch S, Hiller D, et al. Physical Review B,2012, 85: 165306. [16] Hartel A M, Gutsch S, Hiller D, et al. Physical Review B,2013, 87: 035428. [17] Huang R, Song J, Wang X, et al. Optics Letters,2012, 37(4): 692. [18] Kwack Ho-Sang, Sun Yuanping, Cho Yong-Hoon, et al. Applied Physics Letters,2003, 83(14): 2901. [19] Park Nae-Man, Choi Chel-Jong, Seong Tae-Yeon, et al. Physcal Review Letters,2001, 86(7): 1355. [20] Ma L B, Song R, Miao Y M, et al. Applied Physics Letters,2006, 88: 093102. [21] Wen Xiaoming, Lap Van Dao,Peter Hannaford. Journal of Physics D: Applied Physics,2007, 40: 3573. [22] Jacques I Pankore. Optical Processes in Semiconductors. New York: Dover, 1975. [23] Bisi O, Ossicini S, Pavesi L. Surface Science Reports, 2000, 38(1): 1. [24] Van Driel A F, Nikolaev I S, Vergeer P, et al. Physical Review B,2007, 75: 035329.