Abstract：The present paper uses the R-4B as phosphor dopant, the main body was CBP, regulation carrier composite layer was BCP, and the device structure was ITO/MoO3 (30)/NPB (40)/TCTA (10)/CBP∶R-4B(6%)(15)/BCP(x)/CBP∶R-4B(6%)(15)/BCP(10)/Alq3(40)/LiF/Al. In the device, x was the thickness of the BCP with five different thickness of the device. At the same time, another contrast device was made, which had been optimized at MoO3 without regulated BCP layer. The result shows that the luminous area was 1.18 cm2, BCP was 4, MoO3 was 30 nm, its performance was the best, light voltage was 4 V, maximum efficiency was 18.9 cd·A-1, its corresponding EL main peak was at 612 nm, and color coordinates was (0.643, 0.353), getting stable and high efficient red phosphor OLED devices.
[1] Najafabadi E, Knauer K A, Haske W, et al. Appl. Phys. Lett., 2012, 101: 023304. [2] ZHAO Juan, YU Jun-sheng, LI Lu, et al(赵 娟, 于君生，李 璐，等). Journal of Optoelectronics·Laser(光电子·激光)，2011, 22(2): 170. [3] Tae J P, Woo S J, Park J J, et al. Appl. Phys. Lett., 2008, 92(11): 113308-1. [4] CHEN Jin-xin, CHEN Jin-di, WU Zhong-zhi(陈金鑫，陈锦地，吴忠帜). White OLED for Lighting(白光ＯＬＥＤ照明). Shanghai: Shanghai Jiaotong University Press(上海：上海交通大学出版社), 2011. 81. [5] Liu Z W, Helander M G, Wang Z B, et, al. Appl. Phys. Lett., 2009, 94: 113305. [6] Adachi C, Baldo M A, Forrest S R, et al. Appl. Phys. Lett.，2000, 77(6): 904. [7] ZHANG Jing，ZHANG Fang-hui(张 静，张方辉). Journal of Optoelectronics·Laser(光电子·激光)，2012，23(11): 2056. [8] YANG Shao-peng, JU Xiu-qin, ZHAO Fang-chao, et al(杨少鹏，居秀琴，赵方超，等). Journal of Functional Materials(功能材料)，2009, 40(9): 1422. [9] Han Liangliang, Yang Dongfang, Li Wenlian, et al. Appl. Phys. Lett., 2008, 93: 153303. [10] LI Hong-yan, ZHANG Yu-xiang, ZHANG Hong-ke, et al(李红艳，张玉祥，张宏科，等). Chinese Journal of Luminescence(发光学报)，2009, 30(5): 585. [11] DING Lei, ZHANG Fang-hui(丁 磊，张方辉). Journal of Optoelectronics·Laser(光电子·激光)，2011, 22(12): 1761. [12] TANG Xiao-qing, YU Jun-sheng, LI Lu, et al(唐晓庆，于军胜，李 璐，等). Chinese Journal of Luminescence(发光学报)，2008，29(2)：253. [13] Zhao Yongbiao, Chen Jiangshan, Ma Dongge. Appl. Phys. Lett., 2011, 99: 163. [14] Zhao Yan, Duan Lian, Zhang Deqiang, et al. Appl. Phys. Lett., 2012, 100: 083304. [15] Teng Mingyu, Zhang Song, Jiang Shengwei, et al. Appl. Phys. Lett., 2012, 100: 0703303.
