Si基CeO2/Tb4O7超晶格薄膜发光特性的研究

doi:10.3964/j.issn.1000-0593(2011)08-2067-04

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摘要：利用电子束蒸发技术在P型硅衬底上沉积了CeO₂/Tb₄O₇超晶格样品，将样品置于弱还原气氛中高温退火后，观察到薄膜样品在488，544，588以及623 nm左右出现Tb³⁺的四个典型发光峰。结合激发光谱、吸收光谱以及XRD分析表明，CeO₂薄膜在高温下失氧，发生Ce⁴⁺→Ce³⁺转变，Ce³⁺吸收紫外光后，Ce³⁺与Tb³⁺发生能量传递，产生发光。通过改变Tb₄O₇薄膜厚度，研究了Tb₄O₇层厚对超晶格发光的影响，结果显示在Tb₄O₇层厚为0.5 nm时，发光强度最大;Tb4O₇层厚大于0.5 nm时，由于Tb³⁺间的能量传递，产生浓度猝灭。同时，对超晶格样品在900～1 200 ℃之间进行了不同温度、不同时间的退火，结果显示在1 200 ℃下进行2 h的退火，薄膜发光强度达到最大。研究认为，Ce³⁺的浓度、氧空位缺陷以及Ce³⁺与Tb³⁺间距的变化是导致这一结果的主要原因。

关键词：超晶格;光致发光;能量传递;浓度猝灭

Abstract：CeO₂/Tb₄O₇ superlattices were deposited on P type Si wafers by e-beam evaporation technology. Four typical photoluminescence peaks of Tb³⁺ ions which located around 488, 544, 588 and 623 nm were obtained after the superlattices annealing in weak reducing atmosphere at high temperature. It was indicated that CeO₂ films transferred to amorphous state as the valence transition of Ce⁴⁺→Ce³⁺ which was induced by thermal annealing, the energy transfer occurred between Ce³⁺ ions and Tb³⁺ ions, and the Tb³⁺ ions emition could be detected after obtaining the energy from Ce³⁺ ions. A study about the effect of Tb₄O₇ thickness on the superlattices photoluminescence showed that the maximum PL intensity as thickness of Tb₄O₇ films were about 0.5 nm, the concentration quenching might occur because of the energy transfer among the Tb³⁺ ions. The annealing conditions research demonstrated that the maximum PL intensity could be obtained as the superlattices annealed at 1 200 ℃ for 2 hour. Further investigation inferred that the concentration of Ce³⁺ ions，Oxygen vacancy defects and the distance between Ce³⁺ ions and Tb³⁺ ions play an important role in the annealing process.

Key words：Superlattices;Photoluminescence;Energy transfer;Concentration quenching

收稿日期: 2010-09-08 修订日期: 2010-12-25

中图分类号:

O472+.3

通讯作者: 衣立新 E-mail: lxyi@bjtu.edu.cn

引用本文:

王申伟，衣立新^*，丁甲成，高靖欣，郭逦达，王永生 . Si基CeO₂/Tb₄O₇超晶格薄膜发光特性的研究 [J]. 光谱学与光谱分析, 2011, 31(08): 2067-2070.
WANG Shen-wei, YI Li-xin^*, DING Jia-cheng, GAO Jing-xin, GUO Li-da, WANG Yong-sheng . A Study of Photoluminescence Properties of Si-Based CeO₂/Tb₄O₇ Superlattices . SPECTROSCOPY AND SPECTRAL ANALYSIS, 2011, 31(08): 2067-2070.

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