Abstract：InGaN/GaN multiquantum well, grown by MOCVD on a sapphire substrate and annealed under the conditions of 700 and 900 ℃·(20 min)-1, was studied by means of mirco-Raman spectroscopy and photoluminescence. The Raman peak of E2, A1 showed red shift after multiquantum were wells annealed, and the HWHM of Raman peak decreased imperceptibly. Moreover, the photoluminescence peak of the sample annealed under the condition of 700 ℃·(20 min)-1 showed a red shift, then appeared a blue shift under the condition of 900 ℃·(20 min)-1. These results clearly showed that the sample annealed induced strain stress relief that could explain Raman peak shift, but the piezoelectric field induced the quantum-confined Stark effect, which can’t agree with the photoluminescence experiment. Sample annealed could change the width of quantum well and InGa phase segregated; these factors influencing structure of quantum well could explain the results of photoluminescence ｓpectra.
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