Abstract：300 nm thick aluminum films were deposited on SiO2 substrates by heat evaporation. At 0 ℃, 40 V DC voltage, the authors successfully prepared high density Al2O3 films by anodic oxidation on SiO2 substrates with 15 wt% H2SO4 as electrolyte, and AFM was employed to study the film surface morphology． At room temperature the authors measured the photoluminescence spectrum of Al2O3 films prepared at different anodic voltages excited by Xe lamp. In addition, the authors monitored their excitation spectra of different emission peaks, and the authors found that the relative emission intensity gets weaker and shifts to lower energy at higher anodic voltage. At 40 V anodic voltage the authors observed new 356 nm ultraviolet emission, which has the same 210 nm excitation emission. Based on the discussion of the relative intensity of the PL spectra of anodic alumina at different voltages, the authors suggest that F and F+ oxygen vacancy defects were responsible for the observed 356 and 386 nm ultraviolet photoluminescence from Al2O3 anodic film at 40 V voltage.
熊德平, 张希清, 林 鹏, 王 丽. 石英衬底阳极氧化铝膜的制备及其光致发光的研究[J]. 光谱学与光谱分析, 2005, 25(06): 832-835.
XIONG De-ping, ZHANG Xi-qing, LIN Peng, WANG Li. Preparation of Anodic Al2O3 Films on SiO2 Substrate and Their Photoluminescence Properties. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2005, 25(06): 832-835.
[1] WANG Ai-hua，et al(王爱华，等). Chinese Journal of Inorganic Chemistry(无机化学学报)，2002, 18(5): 447. [2] Hideki Masuda, Kenji Fukuda. Science, 1995, 268: 1466. [3] WU Jun-hui，et al(吴俊辉，等). Chinese Journal of Semiconductors(半导体学报)，1999，20(4)：314. [4] GAO Tao，et al(郜 涛，等). Chinese Science Bulletin(科学通报), 2003, 48(6): 551. [5] Yamamoto Y, Baba N, Tajima S. Nature, 1981, 289: 572. [6] Du Y, Cai W L, Mo C M，et al. Appl. Phys. Lett., 1999, 74: 2951. [7] WU Jun-hui，et al(吴俊辉，等). Chinese Journal of Luminescence(发光学报), 2000, 21: 53. [8] Pu Lin, Bao Ximao, Zou Jianping, Feng Duan. Angew. Chem. Int. Ed. 2001, 40: 1493. [9] Siejka J, Ortega C, An O. J. Electrachem. Soc., 1977, 124: 883. [10] Evaus B D, Stapelbroek M. Phys. Rev. B, 1978, 18: 7089. [11] Lee K H, Crawford J H Jr. Phys. Rev. B, 1979, 19: 3217. [12] Pogatshnik G J, Chen Y, Evans B D. IEEE Trans. Nucl. Sci., 1987，NS-34: 1709. [13] Wu J H et al. Appl. Phys. A, 2001, 72: 735. [14] ZHAO Qing-nan, LI Chun-ling, LIU Bao-shun, ZHAO Xiu-jian(赵青南，李春领，刘保顺，赵修建). Spectroscopy and Spectral Analysis(光谱学与光谱分析)，2004, 24(5): 603.
