基于XRD和PL光谱分析的InGaAs/GaAs量子阱生长温度依赖性研究

李博^1,², 马淑芳^1,^3,^*, 阳智^1,², 程睿思^1,², 刘思敏^1,², 王嘉惠^1,², 郝晓东^1,³, 尚林^1,³, 仇伯仓^1,³, 董海亮⁴, 韩丹⁴, 许并社^1,^4,^*

Temperature Dependence of InGaAs/GaAs Quantum Well Growth Characterized by XRD and PL Spectral Analysis

LI Bo^1,², MA Shu-fang^1,^3,^*, YANG Zhi^1,², CHENG Rui-si^1,², LIU Si-min^1,², WANG Jia-hui^1,², HAO Xiao-dong^1,³, SHANG Lin^1,³, QIU Bo-cang^1,³, DONG Hai-liang⁴, HAN Dan⁴, XU Bing-she^1,^4,^*

(a)样品A与B(004)对称面的2θ-ω 扫描; (b)两样品多级卫星峰的半高宽