蓝光激光器结构中InGaN/GaN多量子阱界面效应的精细光致发光光谱研究
王滔1,2, 刘建勋2, 葛啸天2, 王荣新2, 孙钱2, 宁吉强2,*, 郑昌成3,*

Fine Photoluminescence Spectroscopic Characterization of Interfacial Effects on Emission Properties of InGaN/GaN Multiple Quantum Wells in a Blue-Light Laser Diode Structure
WANG Tao1,2, LIU Jian-xun2, GE Xiao-tian2, WANG Rong-xin2, SUN Qian2, NING Ji-qiang2,*, ZHENG Chang-cheng3,*
H2-MQW和N2-MQW样品变温PL光谱特征变化规律 (a) 发光峰位能量的温度依赖关系; (b) 发光峰积分强度的温度依赖关系, 其中实线为Arrhenius拟合结果