光谱学与光谱分析 |
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Study on Single-Walled Carbon Nanotube Thin Film Photoelectric Device |
XIE Wen-bin, ZHU Yong*, GONG Tian-cheng, CHEN Yu-lin, ZHANG Jie |
Key Laboratory for Optoelectronic Technology & System, Education Ministry, Chongqing University, Chongqing 400044, China |
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Abstract The single-walled carbon nanotube film photoelectric device was invented, and it can generate net photocurrent under bias voltage when it is illuminated by the laser. The influences of bias voltage, laser power and illuminating position on the net photocurrent were investigated. The experimental results showed that when the center of the film was illuminated, the photocurrent increased with the applied bias, but tended to saturate as the laser power increased. As the voltage and the laser power reached 0.2 V and 22.7 mW respectively, the photocurrent reached 0.24 μA. When the voltage was removed, the photocurrent varied with the laser illuminating position on the film and its value was distributed symmetrically about the center of the device. The photocurrent reached maximum and almost zero respectively when the laser illuminated on two ends and the center of the film. Analysis proposes that the net photocurrent can be generated due to internal photoelectric effect when the device is under voltage and the laser illuminates on the center of the film. It can be also generated due to photo-thermoelectric effect when the device is under no voltage and the laser illuminates on the film, and the relation between the net photocurrent and the illuminating position was derived according to the nature of thermoelectric power of single-walled carbon nanotubes with the established temperature model, which coincides with experimental result. Two effects are the reasons for the generation and variety of the net photocurrent and they superimpose to form the result of the net photocurrent when the device is under general conditions of voltage and laser illuminating position. The device has potential applications in the areas of photovoltaic device and optical sensor for its characteristic.
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Received: 2013-12-22
Accepted: 2014-03-19
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Corresponding Authors:
ZHU Yong
E-mail: yongzhu@cqu.edu.cn
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