稀土Tb<SUP>3+</SUP>掺杂纳米ZnO的发光性质

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Abstract It is known that zinc oxide is a kind of important functional and novel material of Ⅱ-Ⅵ wide bandgap semiconductor(E_g=3.37 eV), and has excellent microstructural, chemical and physical properties. The intensity of photoluminescence, luminescence peak positions and other kinds of luminescence properties of ZnO∶RE³⁺ nanocrystalline are strongly dependent on the annealing temperature and time, and the concentration of the doping rare earth ions. Terbium-doped zinc oxide nanocrystalline were successfully prepared by sol-gel process at different annealing temperature. Photoluminescence spectrum (PL), photoluminescence spectrum excitation(PLE) and X-ray diffraction pattern(XRD) of nanocrystalline ZnO∶Tb³⁺ with excitation wavelength 368 nm were measured at room temperature. The emission from ⁵D₄→⁷F₆(485 nm), ⁵D₄→⁷F₅(544 nm), ⁵D₄→⁷F₄(584 nm) and ⁵D₄→⁷F₃(620 nm) of Tb³⁺ ions, and the wide visible band of ZnO were observed. Photoluminescence intensity of nanocrystalline ZnO∶Tb³⁺ on the doping concentration and annealing temperature was given, and it was found that the optimal dopant concentration and annealing temperature were 4 at% and 600 ℃, respectively. The luminescence process of Tb³⁺-doped zinc oxide nanocrystalline was investigated by using PL and XRD. The photoluminescence mechanism suggests that there is energy transfer between ZnO nanocrystalline hosts and the doping Tb³⁺ centers.

Key words：ZnO∶Tb³⁺ nanocrystalline;Sol-gel process;Photoluminescence;Energy transfer

Received: 2006-11-11 Accepted: 2007-03-12

ZTFLH:

O484

Corresponding Authors: SONG Guo-li E-mail: S.gl@263.net

Cite this article:

SONG Guo-li. Luminescence Characteristics of Terbium-Doped Nanocrystalline Zinc Oxide[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2007, 27(12): 2409-2412.

URL:

https://www.gpxygpfx.com/EN/Y2007/V27/I12/2409

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