| 光谱学与光谱分析 |
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| Effect of Rubrene Position on the EL Performance of the Device and Analysis of the Exciton Recombination Zone |
| XU Deng-hui1，LI Xiong1，WANG Xiu-e1，ZHAO Ci1，ZHAO Jia1，DENG Zhen-bo2，Lü Zhao-yue2，CHEN Zheng2 |
1. School of Mechanical Engineering, Beijing Technology and Business University, Beijing 100037, China
2. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China |
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Abstract By using an ultrathin 5,6,11,12-tetraphenylnaphthacene (rubrene) layer deposited on the top of host materials，the influence of rubrene layer position on the electroluminescence (EL) spectra of organic light-emitting devices (OLEDs) was studied.When the rubrene layer is located at the interface between N,N’-diphenyl-N,N’-bis(1-naphthyl)-(1,18-biphenyl)-4,4’-diamine (NPB) and tris(8-hydroxyquinoline) aluminum (AlQ) layer, EL luminescence of the device is nearly coming from rubrene emission. From the analysis of the EL spectra of the devices with different rubrene layer position, the solely contribution of rubrene and AlQ, respectively, to the luminescence of the devices is determined by spectra unmixing. Based on the analysis, the exciton length in AlQ layer is determined to be about 15-20 nm. The exciton transport and recombination characteristics are also discussed in this work.
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Received: 2010-05-18
Accepted: 2010-08-22
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Corresponding Authors:
XU Deng-hui
E-mail: xudh@th.btbu.edu.cn
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