| 光谱学与光谱分析 |
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| Photoluminescence of Nano-SiC Annealed by Pulse Laser |
| YU Wei，HE Jie，SUN Yun-tao，HAN Li, FU Guang-sheng |
| College of Physics Science and Technology, Hebei University, Baoding 071002, China |
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Abstract Nanocrystalline silicon carbon (nc-SiC)from amorphous silicon carbon films was obtained through XeCl excimer laser annealing. The photoluminescence (PL) of the nc-SiC was analyzed at different annealing laser energy density. It was observed that PL presented a wide luminescence band from 300-600 nm in the nc-SiC films. The two main luminescence bands, situated at 398 and 470 nm respectively, are attributed to band to band and defect recombination in the 6H-SiC based on the structure changes of the nc-SiC films. The relative PL intensity of these two bands was determined by the surface state density in the nc-SiC films and their irradiative life time.
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Received: 2003-12-15
Accepted: 2004-05-26
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Corresponding Authors:
YU Wei
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