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| Preparation of Ba9Lu2Si6O24:Eu3+Red Phosphor and Its Application in White Light-Emitting Diode |
| WANG Yun-zheng1, JI Hong-bo1, LI Zhao2*, WU Kun-yao1, 2*, WANG Ya-nan2 |
1. School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710000, China
2. School of Materials Engineering, Xi'an Aeronautical University, Xi'an 710077, China
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Abstract The white light-emitting diode (NUV-WLED) assembled by the near-ultraviolet chip and the red-green-blue phosphor can effectively alleviate the “blue light hazard” and improve the color rendering index. In this study, Ba9Lu2Si6O24:xEu3+(0≤x≤0.15) red phosphors were prepared by high-temperature solid-state method, and the phase structure, micromorphology and luminescence properties of the samples were studied by X-ray powder diffraction, scanning electron microscope and spectrometer, and the effect of Eu3+ doping on the luminescence properties was analyzed. Eu3+ was successfully doped into the Ba9Lu2Si6O24 matrix, and the central excitation peak of the sample was 393 nm (7F0→5L6), the central emission peak was 612 nm (5D0→7F2), and the luminous intensity was the highest when x=0.09. The white LED device was fabricated from Ba9Lu2Si6O24:xEu3+ red phosphor, and the color rendering index was close to 90 and showed stable white light emission. The Ba9Lu2Si6O24:xEu3+ red phosphor reported in this study has potential application value in white light-emitting diode illumination driven by UV LED chips.
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Received: 2024-08-07
Accepted: 2024-12-01
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Corresponding Authors:
LI Zhao, WU Kun-yao
E-mail: pylizhao@163.com; 409181898@qq.com
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