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Low-Light-Level Readout Based on Quantum Dots-in-Well Photodetector at Room Temperature |
MAO Feng1, WANG Ming-jia2* |
1. Electrical and Electronics Engineering, Shanghai Institute of Technology, Shanghai 201418, China
2. College of Automation and Electronic Engineering, Qingdao University of Science and Technology, Qingdao 266042,China |
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Abstract In this paper, the photoluminescence detection of quantum dot photodetector arrays is studied. The quantum dot detector adopts AlAs/GaAs/AlAs dual-barrier structure. In the wide GaAs well, there are InAs quantum dots (QDs) and In0.15Ga0.85As quantum Well (QW), and a simple device model for analysis is built. Under the irradiation of 632.8 nm He-Ne laser at room temperature, when the optical power is 0.01 pW and the bias voltage of the device is -0.5 V, the integration time is 80.2 μs and the voltage response rate is 7.0×1011 V·W-1, which has a very high sensitivity. At the temperature of 300 K, this quantum dot detector can detect the very weak light whose power is less than 10-14 W. The high-sensitivity spectrometer and molecular hyperspectral system developed with this kind of quantum dot photodetector are used to detect biological tissue samples. A spectroscopic system for mutual verification and mutual calibration of biological tissues is developed.
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Received: 2018-03-08
Accepted: 2018-06-28
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Corresponding Authors:
WANG Ming-jia
E-mail: mingjiawang@126.com
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