1. 南京邮电大学光电工程学院，江苏 南京 210023
2. Department of Microsystems Engineering—IMTEK, University of Freiburg, 79110 Freiburg，Germany
3. 南京邮电大学Peter Grüenberg中心，江苏 南京 210023
Movable GaN Membrane Micro-Grating on Patterned SOI Substrate Deposited with Molecular Beam Epitaxy
LÜ Fan-min1, LI Pei2, WANG Yong-jin3, HU Fang-ren1,3*, ZHU Wen-zhen1
1. School of Optoelectronic Engineering, University of Nanjing Posts and Telecommunications, Nanjing 210023, China
2. Department of Microsystems Engineering—IMTEK, University of Freiburg, 79110 Freiburg，Germany
3. Peter Grüenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
Abstract：As the third generation of semiconductor material, GaN has many advantages, such as wide bandgap, direct band gap, corrosion resistance and so on. Also, GaN is a very promising material for MOEMS. Because the etching of GaN material is not mature, epitaxial growth on patterned substrate is more helpful for GaN/SOI device. A movable GaN grating on patterned SOI substrate was designed and fabricated with Si micromaching and molecular beam epitaxy process of GaN. The grating actuated by a SOI electrostatic comb-drive micro-actuator could move in two dimensional directions and it could be used as filter in Terahertz wavelength. The period and width of the grating is 16 and 6 μm, respectively. The resonant wavelength is 25.901 μm. An horizontal displacement of ±7.26 μm is obtained at 220 V of horizontal voltage with simulation. When the vertical voltage is 200 V, the displacement is 2.5 μm. The photoluminescence (PL) measurements of the deposited InGaN/GaN multiple quantum well on patterned SOI substrate are carried out with laser Raman spectrometer. The experimental results show that good optical property of the InGaN/GaN multiple quantum well. A wide emission wavelength from 350 to 500 nm is demonstrated. With the increase of temperature from 10 K to room temperature, the photoluminescence peak position appears a tendency of “S” shape because of the localized effect and band shrink in the InGaN/GaN quantum well.
Key words：Molecular beam epitaxy；GaN；Patterned SOI substrate；Grating；Photoluminescence
吕凡敏，李 佩，王永进，胡芳仁，朱闻真. 图形化Silicon-on-Insulator衬底上分子束外延生长可动GaN微光栅的研究[J]. 光谱学与光谱分析, 2017, 37(06): 1946-1950.
LÜ Fan-min, LI Pei, WANG Yong-jin, HU Fang-ren, ZHU Wen-zhen. Movable GaN Membrane Micro-Grating on Patterned SOI Substrate Deposited with Molecular Beam Epitaxy. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2017, 37(06): 1946-1950.
