Fabrication and Performance of Pixelated γ-CuI Scintillation Conversion Screens Based on Oxidized Silicon Micropore Arrays
SUN Shou-qiang, GU Mu*, CHEN Ting-ting, ZHANG Juan-nan, LIU Xiao-lin, LIU Bo, HUANG Shi-ming, NI Chen
Shanghai Key Laboratory of Special Artificial Microstructure Materials & Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
Abstract：The pixelated CuI scintillation conversion screens which have a monodisperse micro-columnar structure were fabricated with pressure-injection method using the high-purity CuI powder and oxidized silicon micropore arrays. The results of scanning electron microscopy and X-ray diffraction show that CuI micro-columns are continuous and dense with the crystal lattice of (-phases. Their diameters, spaces and depths are about 2.5, 1.5 and 80 μm, respectively. X-ray excited luminescence (XEL) reveals that the as-prepared γ-CuI scintillation screens have an emission band near 680 nm, which has a comparatively slow decay time. After iodine-doping especially at the content of 10 Wt%, the emission band near 680 nm is effectively suppressed with an emission peak at 432 nm, which has an ultra-fast decay time. The spatial resolution of the pixelated γ-CuI scintillation conversion screens was measured with knife-edge method. The result shows that the resolution can reach to 38 lp·mm-1, which indicate that the pixelated γ-CuI scintillation screens have excellent spatial resolution with ultra-fast time response and it possess a unique value in X-ray imaging.
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