Electroluminescent Device Based on Terbium Complex
XIAO Jing1, DENG Zhen-bo1*, XU Deng-hui1, XU Ying1, WANG Rui-fen2
1. Institute of Optoelectronics, Key Laboratory of Information Storage and Display, Beijing Jiaotong University, Beijing 100044, China 2. Department of Chemistry, Hebei Normal University, Shijiazhunag 050091, China
Abstract：Rare earth complex Tb(BA)3phen has been synthesized, which is used as an emitting material in electroluminescence. The properties of monolayer device with the rate of 1 000 r·min-1 and the impure concentration of 1∶5 are the best. And the highest brightness of this device reached 26.8 cd·cm-2 at a fixed bias of 21 V. Bright green emission can be obtained from the optimized double-layer device and the highest EL brightness of the device reaches 322cd·m-2 at the voltage of 22 V.
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