Piezoresistivity of Ultra-Thin Poly-Silicon Layer by Aluminum-Induced Layer Exchange
WANG Cheng-long1, MA Jun1, FAN Duo-wang1, 2, XING Da3, LIU Song-hao3
1. National Engineering Research Center for Technology and Equipment of Environmental Deposition, Lanzhou Jiaotong University, Lanzhou 730070, China 2. Key Laboratory of Opto-Technology and Intelligent Control Ministry of Education, Lanzhou Jiaotong University, Lanzhou 730070, China 3. School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510631, China
Abstract：Poly-Si film, due to its favorable piezoresistive properties, has been widely used in piezoresistive sensors. The previous researches have shown that the ultra-thin poly-Si film have better piezoresistive properties than common poly-silicon film, and have promising future of application. A promising method to obtain large grained high quality poly-silicon films by low-temperature crystallization of an amorphous precursor material is the aluminum-induced layer exchange (ALILE). In this paper, ultra-thin poly-Si films were prepared by aluminum induced layer exchange (ALILE). Experimental results of Raman spectroscopy show that a narrow and symmetrical Raman peak at the wave number of about 518 cm-1 was observed for all samples, indicating that the films were fully crystallized. XRD results show that the crystallites of ultra-thin poly-silicon layer were preferably (111) and (220) oriented. Hall affect measurements show that hole concentration of the films (p-type) were between 9×1018 and 6×1019 cm-3. Restorative properties show that the piezoresistors exhibit gauge factors (GFs) up to 60, with temperature coefficients of GF (TCGF) between -0.17～0%℃ and temperature coefficients of resistance (TCR) between -0.2 and -0.1%℃. The study of the ultra-thin poly-Si films by ALILE is completed, and the study results lay a foundation for application of the film to piezoresistive sensor.
王成龙1，马 军1，范多旺1,2，邢 达3，刘颂豪3. 铝诱导层交换超薄多晶硅薄膜制备及压阻特性[J]. 光谱学与光谱分析, 2015, 35(02): 474-478.
WANG Cheng-long1, MA Jun1, FAN Duo-wang1, 2, XING Da3, LIU Song-hao3. Piezoresistivity of Ultra-Thin Poly-Silicon Layer by Aluminum-Induced Layer Exchange. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2015, 35(02): 474-478.
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