Abstract:As the general method of defect characterization is destructive, during the current research on the effect of defect on device, nondestructive defect characterization is important especially. The defects of 4H-SiC homoepitaxial layer had been observed and studied, based on the principle of cathodoluminescence(CL). The results show that the intrinsic stacking faults(SFs), threading edge dislocations(TEDs), threading screw dislocations(TSDs) and basal plane dislocations(BPDs) can be observed by cathodoluminescence. The shape are rightangle triangle, dot and stick, repectively. So this method is available for nondestructive defect characterization. The correlation between 4H-SiC substrate defects and epilayer defects will be established if we characterize the defects of 4H-SiC wafers with and without an epilayer. In addition, if we characterize the defects of device before and after operation, the correlation between SiC defects of the devices before and after operation will be established, too.
Key words:Cathodoluminescence(CL);4H-SiC;Nondestructive defect characterization;Dislocations and stacking faults
苗瑞霞,张玉明,汤晓燕,张义门. SiC晶体缺陷的阴极荧光无损表征研究[J]. 光谱学与光谱分析, 2010, 30(03): 702-705.
MIAO Rui-xia,ZHANG Yu-ming,TANG Xiao-yan,ZHANG Yi-men . The Study of Nondestructive Defect Characterization of SiC by Cathodoluminescence. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2010, 30(03): 702-705.
[1] Liu K X, Stahlbush R E, Lew K K, et al. J. Electron Mater, 2008, 37: 730. [2] Ryu S H, Kornegay K T. IEEE Trans. Electron Decices, 1998, 45: 45. [3] Maxinenko S I, Sudarshan T S. J. Appl. Phys., 2005, 97: 074501. [4] Fujiwara H, Kimoto T, Tojo T, et al. Appl. Phys. Lett., 2005, 87: 051912. [5] Zhang Z, Moulton E, Sudarshan T S. Appl. Phys. Lett., 2006, 89: 081910. [6] Camassel J, Juilaguet S. J. Physics D: Applied Physics, 2007, 40(20): 6264. [7] XU Zhen-jia(许振嘉). Testing and Analysis on Semiconductor(半导体检测与分析). Beijing:Science Press(北京:科学出版社), 2007. 245. [8] LIU En-ke, ZHU Bing-sheng, LUO Jin-sheng(刘恩科, 朱秉升, 罗晋生). Physics of Semiconductor(半导体物理学). Beijing:National Defense Industry Press(北京:国防工业出版社),2006. 47. [9] Miyanagi T, Tsuchida H, Kamata I, et al. Appl. Phys. Lett., 2006, 89: 062104. [10] Chen B, Chen J, Sekiguchi T, Ohyanagi T, et al. Appl. Phys. Lett., 2008, 93: 033514. [11] Izumi S, Tsuchida H, Kzmata I, et al. Appl. Phys. Lett., 2005, 86: 202108. [12] XU Jun, XU Ke, CHEN Li, et al(徐 军, 徐 科, 陈 莉,等). J. Modern Instruments(现代仪器), 2005, 11: 24. [13] ZHAO Jing-shi(赵敬世). Theoretical Basis of Dislocation(位错理论基础). Beijing:National Defense Industry Press(北京:国防工业出版社), 1989. 16. [14] CHEN En-guang, YI Li-xin, WANG Shen-wei, et al(陈恩光, 衣立新, 王申伟, 等). Spectroscopy and Spectral Analysis(光谱学与光谱分析), 2008, 28(2): 247.