Study of Electroreflectance Spectrum and Franz-Keldysh Effect at Metal-GaAs Interfaces
WANG Bin1,2,XU Xiao-xuan1,2,QIN Zhe1,2,SONG Ning1,2,ZHANG Cun-zhou1,2*
1.TEDA Applied Physics School, Nankai University, Tianjin 300457, China 2.The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, Ministry of Education, Nankai University, Tianjin 300457, China
Abstract：Electronic properties (electric field, Fermi level pinning and density of interface states) of Au-GaAs, Al-GaAs and Ni-GaAs interfaces were studied by optical methods.These interfaces were fabricated by depositing metals (Ni, Au and Al) on specialized surface-intrinsic-n+(SIN+) GaAs samples.Electroreflectance (ER) was used to study the electric fields and Fermi level pinnings of metal-GaAs interfaces.Fourier transformation (FT) of ER spectra was used to analyze these interfacial properties.Assuming that only a fraction of the total illuminated area was the effective interface state area, the density of interface states was obtained by measuring the relation between the photovoltage induced by an exciting He-Ne laser beam and the illumination intensity of the laser beam.
王斌1,2,徐晓轩1,2,秦哲1,2,宋宁1,2,张存洲1,2*. 金属-砷化镓界面的电调制反射光谱与Franz-Keldysh效应研究[J]. 光谱学与光谱分析, 2008, 28(08): 1701-1704.
WANG Bin1,2,XU Xiao-xuan1,2,QIN Zhe1,2,SONG Ning1,2,ZHANG Cun-zhou1,2* . Study of Electroreflectance Spectrum and Franz-Keldysh Effect at Metal-GaAs Interfaces. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2008, 28(08): 1701-1704.
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