Abstract:Strained Si/SiGe heterostructure was prepared by high dose Ge ion implantation and a subsequent high temperature rapid thermal processing method. A 325 nm UV laser was used to analyze the Raman spectra of the strained Si cap layer. It was found that tensile strain in the Si cap layer can induce a shift toward lower frequency of the first order Raman scattering peak of 520 cm-1. In light of the variation of peak position, a lateral tensile stress of 12.5×108 N·m-2 in Si cap layer was worked out. However, the tensile strain in the Si cap layer can not lead to a variation of the sub-order Raman scattering peaks around 1 555 and 2 330 cm-1.
肖清华,屠海令. Si/SiGe异质结构的硅盖层中应变对Raman谱特征的影响[J]. 光谱学与光谱分析, 2005, 25(05): 719-722.
XIAO Qing-hua,TU Hai-ling. Influence of Strain in the Si Cap Layer of Si/SiGe Heterostructure on Its Raman Spectra . SPECTROSCOPY AND SPECTRAL ANALYSIS, 2005, 25(05): 719-722.
[1] Vogelsang T, Hofmann K R. IEEE Transactions on Electron Devices,1992, 39(11): 2641. [2] Huang L J. Electronic Engineering, 2002, 74(904): 34. [3] Emulsion Polymer Technologies Group. Emulsion Polymer Technologies, 2002,16(8): 2. [4] Peter Singer. Semiconductor International, 2003, 26(8): 34. [5] Ar-monk N Y. Advanced Materials & Process, 2001, 159(8): 16. [6] Keyes R W. Journal of Physics D, 2002, 35(5): L7. [7] Keyes R W. Applied Physics A, Materials Science & Processing, 2003, 76(5): 737. [8] ZHU Pei-yu, CHEN Pei-yi, LI Chen et al(朱培喻,陈培毅,黎 晨等). Spectroscopy and Spectral Analysis(光谱学与光谱分析),2001,21(4):464. [9] Temple P A, Hathaway C E. Physical Review B, 1973, 7(8): 3685. [10] WANG Jing(王 敬). Doctoral Dissertation(博士学位论文). Study of the Surface Morphology and Chemical Bonds of Polished Silicon Wafers in Chemical Cleaning Solutions(化学清洗液中硅片表面化学键及形貌的研究). General Research Institute for Non-Ferrous Metal(北京有色金属研究总院), 1999. 42. [11] Encyclopedia on Material Sciences(2nd Part)(材料科学百科全书·下卷). Beijing:Chinese Encyclopedia Press(北京:中国大百科全书出版社), 1987. 716. [12] Richter H, Wang Z P, Ley L. Solid State Commun., 1981. 39: 625. [13] Cerdeira F, Buchenauer C J, Pollak Fred H et al., Phys. Rev. B, 1972, 5(2): 580. [14] LI Bi-bo,HUANG Fu-min, ZHANG Shu-lin, GAO Yu-zhi, ZHANG Li-chun(李碧波,黄福敏,张树霖,高玉芝,张利春). Chinese Journal of Semiconductors(半导体学报), 1998,19(4): 299.