ZnO:Er<SUP>3+</SUP>纳米晶的制备和室温发射

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摘要：文章采用化学沉淀法制备纳米晶ZnO:Er³⁺粉体，所制备的纳米晶ZnO:Er³⁺粉体具有稀土离子特征强室温可见发射和近红外发射现象，且首次观测到纳米晶ZnO基质和稀土Er离子之间有有效的能量传递。

关键词：光致发光;掺杂;纳米晶;能量传递;化学沉淀法

Abstract：The nanocrystalline ZnO:RE powders with room temperature sharp photoluminescence were prepared successfully by chemical precipitation method in the present work. This is a great progress in the study of rare earth doped ZnO. For the ZnO:Er³⁺ obtained in the present paper, the room temperature sharp characteristic emissions from the trivalent rare earth Er³⁺, including upconversion and near infrared emission, and the energy transfer between the nanocrystalline ZnO host and the dopants were observed.

Key words：Photoluminescence;Doping;Nanocrystals;Energy transfer;Chemical precipitation

收稿日期: 2004-06-28 修订日期: 2004-09-28

中图分类号:

O482.3

通讯作者: 吕树臣

引用本文:

吕树臣^{1, 2}，宋宏伟²，黄世华² . ZnO:Er³⁺纳米晶的制备和室温发射[J]. 光谱学与光谱分析, 2005, 25(12): 1920-1924.
Lü Shu-chen^{1, 2}，SONG Hong-wei², HUANG Shi-hua² . Preparation and Room Temperature Emission of Nanocrystalline ZnO:Er³⁺ . SPECTROSCOPY AND SPECTRAL ANALYSIS, 2005, 25(12): 1920-1924.

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[1] Bhushan S, Saleem M. Phys. Stat. Sol.(a), 1976, 38: K27.
[2] Morrison C A, Leavitt R P. in: Handbook. Physics and Chemistry of Rare Earths, Vol.5, Ed. Gschneidner K A，Eyring L. North-Holland Paubl. Co.，1982. 461.
[3] Boyn R. Phys. Stat. Sol.(b), 1988, 148: 11.
[4] Kouyate D, et al. J. Lumin., 1990, 46: 329.
[5] Kossanyi J, Kouyate D, et al. J. Lumin., 1990, 46: 17.
[6] Greuter F, Blatter G. Semicond. Sci. Technol., 1990, 5: 111.
[7] Kouyate D，Ronfard-Haret J C, Kossanyi J. J. Lumin., 1991, 50: 205.
[8] Ronfard-Haret J C, Kouyate D, Kossanyi J. Solid State Commun., 1991, 79: 85.
[9] Kouyate D, Ronfard-Haret J C, Kossanyi J. J. Electroanal. Chem., 1991, 319: 145.
[10] Kouyate D, Ronfard-Haret J C, Kossanyi J. J. Mater. Chem., 1992, 2: 727.
[11] Bachir S, Ronfard-Haret J C, Azuma K，et al. Chemical Physics Letters, 1993, 213: 54.
[12] Bachir S, Kossanyi J, Ronfard-Haret J C. Solid State Commun., 1994, 89: 859.
[13] Bachir S, Kossanyi J, Sandouly C, et al. J. Phys. Chem., 1995, 99: 5674.
[14] Yasufumi Hayashi, Hidetoshi, Narahara, et al. Jpn. J. Appl. Phys., 1995, 34: 1878.
[15] Bachir S, Azuma K, Kossanyi J, et al. J. of Lumin., 1997, 75: 35.
[16] Zheng B, Michel J, Ren F Y G, et al. Appl. Phys. Lett., 1994, 64: 2842.
[17] Takahei K, Taguchi A. J. Appl. Phys., 1993, 74: 1979.
[18] Favennec P N, Haridon H L, Salvi M, et al. Electron. Lett., 1989, 25: 718.
[19] Oestereich T, Swiatkowski C, Broser I. Appl. Phys. Lett., 1990, 56: 446.
[20] Bresler M S, Gusev O B, et al. Appl. Phys. Lett., 1995, 67: 3599.
[21] Shin J H, Serna R, et al. Appl. Phys. Lett., 1996, 68: 46.
[22] Lombardo S, Campisano S U, et al. Appl. Phys. Lett., 1993, 63: 1942.
[23] Kimura T, Yokoi A, et al. Appl. Phys. Lett., 1994, 65: 983.
[24] Zhao X, Isshiki H, et al. J. Mater. Sci. Technol., 1999, 15: 357.
[25] Komuro S, Katsumata T, et al. Appl. Phys. Lett., 1999, 74: 377.
[26] Fujii M, Yoshida M, Hayashi S, et al. J. Appl. Phys., 1998, 84: 4525.
[27] Mais N, Reithmaier J P, et al. Appl. Phys. Lett., 1999, 75: 2005.
[28] Shuji Komuro, Katsumata T, et al. Appl. Phys. Lett., 2000, 88: 7129.