1. College of Science, Changchun University of Science and Technology, Changchun 130022, China 2. Institute of Physics, Chinese Academy of Sciences，Beijing 100080, China
Abstract：The diamond thin films were deposited on silicon substrates under invariable conditions of process pressure, substrate temperature negative direct-current (dc) bias of substrate and microwave power while the rations of methane (CH4) to hydrogen (H2) changing from 3% to 5% and 9% using electron-cyclotron-resonance microwave plasma-assisted chemical vapor deposition technique（ECRCVD）. In situ Fourier transform infrared spectroscopy (FTIR)have been used to study the plasma species absorbed on the substrate surfaces as well as the species above the substrates surfaces both before and during the nucleation and film growth. It is demonstrated that these techniques canprovide useful information on the early stages of diamond growth. When correlated with film properties measured by Raman spectroscopy and scanning electron microscopy, the results from FTIR indicate that the absorption of the graphitic and diamond phases are related to the ratio of CH4 to H2 and can be identified at the early stages of film growth.
张先徽1,2,冯克成1*,孙岳1,王兴权1,孙秀平1,杨思泽2. FTIR监测金刚石薄膜生长的研究[J]. 光谱学与光谱分析, 2008, 28(05): 1049-1051.
ZHANG Xian-hui1,2,FENG Ke-cheng1,SUN Yue1,WANG Xing-quan1,SUN Xiu-ping1,YANG Si-ze2. The Study of Infrared Absorption Spectrum of Diamond during Growth by FTIR. SPECTROSCOPY AND SPECTRAL ANALYSIS, 2008, 28(05): 1049-1051.
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