Abstract:A novel multispectral color sensor based on vertically stacked structure is introduced. The advantages of this sensor include anti color aliasing, high spatial resolution, elimination of color interpolation and low-pass filter. Its basic principle lies on the silicon material’s different of penetration depth of electromagnetic wave with different wavelength, i.e. blue light with short wavelength is mainly absorbed on the surface, while red light with longer wavelength is mainly absorbed at deeper location. The current research and development are related to two pixel structures: the buried pn junctions structure made by standard silicon process, and stacked amorphous silicon and its alloys thin films made by PECVD. The former one adopts standard silicon technology while the latter one adopts amorphous silicon, which has better optical performance, thus greater flexibility in design. The authors focused on the theoretical and experimental analyses of the spectrum mechanisms and output performances with different pixel structures, and discussed the way for further research.
[1] Richard F Lyon, Paul M Hubel. Eyeing the Camera: Into the Next Century. IS&T/SID 10th Color Imaging Conference, Scottsdale, AZ, USA, 2002. 349. [2] David L Gilblom, Sang Keun Yoo, Peter Ventura. Proceedings of SPIE, 2004, 5210: 105. [3] Mohanmed Ben Chouikha, Franoise Vienov, LU G N. Proceedings of SPIE, 1998, 3300: 198. [4] Knipp D, Stiebig H, Wagner H. Proceedings of SPIE, 2001, 4306: 156. [5] Knipp D, Street R A, Stiebig H, et al. Optics Express, 2006, 14(8): 3106. [6] Michael H Jones, Stephen H Jones. Optical Properties of Silicon. Virginia Semiconductor, Inc. 2000. [7] Mohajerzadeh S, Nathan A, Selvakumar C R. Sensors and Actuators A, 1994, 44: 119. [8] Findlater K M, Renshaw D, Hurwitz J E D, et al. IEEE Electron Devices Society, 2001, 60. [9] Hsiung-Kuang Tsai, Si-Chen Lee. Appl. Phys. Lett., 1988, 52(4): 275. [10] Giampero de Cesare, Fernanda Irrera, Francesco Lemmi, et al. IEEE Trans. on Electron Devices, 1995, 42(5): 835. [11] Knipp D, Stiebig H, Flsch J, et al. J. Appl. Phys., 1998, 83(3): 1463. [12] Klaus Eberhardt, Thomas Neidlinger, Markus B Schubert. IEEE Trans. on Electron Devices, 1995, 42(10): 1763. [13] Stiebig H, Ulrichs C, Kulessa T, et al. Journal of Non-Crystalline Solids, 1996, 198-200: 1185. [14] Knipp D, Street R A, Stiebig H, et al. Sensors and Actuators A, 2006, 128: 333. [15] Zimmer J, Knipp D, Stiebig H, et al. IEEE Trans. on Electron Devices, 1999, 46(5): 884. [16] Michael Sommer, Peter Rieve, Marcus Verhoeven, et al. IEEE Workshop on CCDs and Advanced Image Sensors, 1999. 187. [17] Rieve P, Sommer M, Wagner M, et al. Journal of Non-Crystalline Solids, 2000, 266-269: 1168. [18] Neidlinger T, Brüggemann R, Brummack H, et al. Journal of Non-Crystalline Solids, 1998, 227-230: 1335. [19] Stiebig H, Knipp D, Hapke P, et al. Journal of Non-Crystalline Solids, 1998, 227-230: 1330. [20] Patrick G Herzog, Dietmar Knipp, Friedhelm Knig, et al. Proceedings of SPIE, 1999, 3963: 60. [21] Patrick G Herzog, Dietmar Knipp, Helmut Stiebig, et al. Proceedings of SPIE, 1998, 3648: 48. [22] Knipp D, Stiebig H, Flsch J, et al. Journal of Non-Crystalline Solids, 1998, 227-230: 1321. [23] Marko Topi?, Franc Smole, Joe Furlan, et al. Journal of Non-Crystalline Solids, 1998, 227-230: 1326. [24] Marko Topi, Franc Smole, Joe Furlan, et al. Journal of Non-Crystalline Solids, 1996, 198-200: 1180. [25] Domenico Caputo, Fernanda Irrera, Fabrizio Palma. Journal of Non-Crystalline Solids, 1996, 198-200: 1172. [26] David L Gilblom, Snag Keun Yoo. Proceeding of SPIE, 2004, 5301: 186. [27] Mario Tucci, Rosario DeRosa. Solid-State Electronics, 2000, 44: 1315. [28] David L Gilblom, Sang Keun Yoo, Peter Ventura. Proceedings of SPIE, 2003, 5074: 318.