相变区硅薄膜拉曼和红外光谱分析
范闪闪1,2, 郭强3, 杨彦彬3, 丛日东3, 于威3, 傅广生1,3

Raman and IR Study on Silicon Films at Transition Regime
FAN Shan-shan1,2, GUO Qiang3, YANG Yan-bin3, CONG Ri-dong3, YU Wei3, FU Guang-sheng1,3
样品的SEM图 (a), (b), (c)依次样品D3, D4, D5放大倍数×50 000;(d), (e), (f)依次为样品D3, D4, D5放大倍数×200 000